Effect of Crystal Pulling Rate on Formation of Crystal-Originated “Particles” on Si Wafers

Ryuta, Jiro; Morita, Etsuro; Tanaka, Toshiro; Shimanuki, Y.

doi:10.1143/jjap.31.l293

Cited by 57 publications

(15 citation statements)

References 1 publication

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“…3,7-10 However, since crystal originated particles ͑COP͒ were reported, 11 a great deal of work has been devoted to determining the actual origin of the oxide defects. [12][13][14][15][16][17][18][19][20][21][22][23][24] We recently used a copper decoration method to show that these oxide defects are caused by an empty octahedral structure. 25 We analyzed the content of the octahedral structure by using energy-dispersive x-ray spectroscopy ͑EDS͒ and showed that the structure is void.…”

Section: Introductionmentioning

confidence: 99%

Impurity dependence of oxide defects in Czochralski silicon

Itsumi

Akiya

Tomita

et al. 1996

Journal of Applied Physics

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Octahedral cavities have recently been found in the Czochralski silicon ͑CZ-Si͒ substrate surface layer just under oxide defects. We investigate the effect that adding HCl to oxygen during oxidation has on the oxide defect density. The effect of intentionally introducing impurities onto a Si surface on the oxide defect density is also examined. Our experimental results suggest that impurities are closely related to the generation of oxide defects. A model is presented in which impurities are incorporated into the growing octahedral cavities during Si crystal growth, and then introduced into the growing oxides during thermal oxidation. These impurities in the oxides then act as a conductive path ͑oxide defects͒ in the insulator on the CZ-Si.

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Section: Introductionmentioning

confidence: 99%

Impurity dependence of oxide defects in Czochralski silicon

Itsumi

Akiya

Tomita

et al. 1996

Journal of Applied Physics

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“…A higher concentration of DIO 3 was more effective in removing organic wax. Although DIO 3 is very effective in removing organic contaminants, DIO 3 shows too low removal rates on thick wax layer. It took more than 45 min at least to reach a film thickness less than 500Å which indicates the ozone reaction is diffusion controlled process.…”

Section: Resultsmentioning

confidence: 99%

Removal of Organic Wax and Particles on Silicon after Batch type Polishing by Ozonated DI Water

Lee

Kim

et al. 2007

ECS Trans.

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To manufacture the wafer used for device chip, several polishing and cleaning process are required. In this study, new concept cleaning process was developed with ozonated DI water (DIO 3 ) to achieve low COO (cost of ownership). Ozone concentration of 55 ppm is used to remove the wax film and particles. A commercial dewaxer was combined with DIO 3 to reduce dewaxing time and SC-1 steps. DIO 3 rinse resulted in less than 50Å of wax thickness while DI water rinse did thicker than 300 Å. Replacing DI rinse with DIO 3 rinse resulted in lower contact angle and completely hydrophilic surface. Optical images of surfaces treated with DIO 3 showed thinner wax layer which indicates no further cleaning steps required. Particle removal efficiency improved further by combining SC-1 cleaning step with DIO 3 rinsing process.

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“…• For defect count only, AFM is the slowest and WIS is about 1093 times faster than that of DDS at the optimized settings (2) and 90 times faster than that of DDS at the projected settings (3). However, if the DDS image size can be increased and the ICCD camera exposure time can be reduced further, the scanning time for DDS is projected to be in the same order to that of the WIS system.…”

Section: G Dds-afm Combination For Defect Detection Localization Anmentioning

confidence: 99%

“…However, there is another type of "particle" commonly found by the laser particle counter on the Czochralski-grown single crystal silicon wafer surface, which is typically called crystal originated "particles" (COPs) [1], [2]. COPs have been Manuscript recognized as surface defects or micropits, which originate from grown-in defects [3]. It was found that the presence of COPs is the main cause of gate oxide integrity (GOI) degradation [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Efficient Detection and Size Determination of Crystal Originated “Particles” (COPs) on Silicon Wafer Surface Using Optical Scattering Technique Integrated to an Atomic Force Microscope

Lee¹,

Yow

Tou

2004

IEEE Trans. Semicond. Manufact.

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Dark-field optical scattering technique is adopted in a surface defect detection system (DDS) to allow an efficient and cost-effective detection and size determination of the crystal originated "particles" (COPs) on polished silicon wafer surface before atomic force microscope (AFM) measurement. The effects of laser beam power, beam angle, beam profile, wafer rotation and intensified CCD (ICCD) camera exposure time on the scattered light diameter of preselected COPs were investigated. An AFM was integrated to the DDS through coordinate linkage to confirm the diagonal length, shape and type of the COPs detected. A correlation curve between the scattered light diameters and the actual diagonal lengths of the COPs was then obtained. Once the correlation is established, the size of COP on any wafer surface can be estimated simply by referring to the correlation curve without constant reference to the AFM. In this study, the detection of a single-type COP with a diagonal length of 60 nm was demonstrated.

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Effect of Crystal Pulling Rate on Formation of Crystal-Originated “Particles” on Si Wafers

Cited by 57 publications

References 1 publication

Impurity dependence of oxide defects in Czochralski silicon

Impurity dependence of oxide defects in Czochralski silicon

Removal of Organic Wax and Particles on Silicon after Batch type Polishing by Ozonated DI Water

Efficient Detection and Size Determination of Crystal Originated “Particles” (COPs) on Silicon Wafer Surface Using Optical Scattering Technique Integrated to an Atomic Force Microscope

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