2009
DOI: 10.1016/j.jallcom.2008.06.116
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Effect of CsI addition on the thermal properties, crystallization kinetics and short-wavelength absorption edges of GeSe2–Ga2Se3 glasses

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Cited by 8 publications
(2 citation statements)
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“…The absorption cut-off edge was located between 940 nm and 1000 nm with the increasing I content. This scenario is most likely due to the addition of I with higher electronegativity and the glass network broadens the width of the forbidden band, which results in the blue-shift of the short-wavelength, cut-off absorption edge [22].…”
Section: Analysis Of Vis-nir Absorption Edges and Optical Band Gapmentioning
confidence: 99%
“…The absorption cut-off edge was located between 940 nm and 1000 nm with the increasing I content. This scenario is most likely due to the addition of I with higher electronegativity and the glass network broadens the width of the forbidden band, which results in the blue-shift of the short-wavelength, cut-off absorption edge [22].…”
Section: Analysis Of Vis-nir Absorption Edges and Optical Band Gapmentioning
confidence: 99%
“…Plot of ln( T) versus 1/T i also is expected to be linear, and from the slop of the plot is −nE a /R, the Avrami parameter (n) can be calculated. The relationship between the glass transition temperature T g and the heating rateˇcan be discussed through the empirical equation: (3) where A and B are constants for a given glass composition [11,12]. Plot of T g versus ln(ˇ) for the prepared samples, the values of A and B can be obtained by using the least square fit, and this equation holds good for the studied samples.…”
Section: Theoretical Considerationsmentioning
confidence: 99%