Effect of Cu Film Thickness on Cu Bonding Quality and Bonding Mechanism

Lu, Tsan-Feng; Hsu, Kai-Ning; Hsu, Ching-Chi; Hsu, Chia-Yu; Wu, YewChung Sermon

doi:10.3390/ma17092150

Cited by 1 publication

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References 32 publications

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“…In our previous studies, it was proposed that the thickness of the Cu film affects the quality of the bonding interface [22]. Additionally, the depth of copper joints has been widely suggested to affect the extent of Cu expansion [16,23,24].…”

Section: Introductionmentioning

confidence: 99%

Effect of Compressive Stress on Copper Bonding Quality and Bonding Mechanisms in Advanced Packaging

Lu,

Lee,

2024

Materials

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The thermal expansion behavior of Cu plays a critical role in the bonding mechanism of Cu/SiO2 hybrid joints. In this study, artificial voids, which were observed to evolve using a focused ion beam, were introduced at the bonded interfaces to investigate the influence of compressive stress on bonding quality and mechanisms at elevated temperatures of 250 °C and 300 °C. The evolution of interfacial voids serves as a key indicator for assessing bonding quality. We quantified the bonding fraction and void fraction to characterize the bonding interface and found a notable increase in the bonding fraction and a corresponding decrease in the void fraction with increasing compressive stress levels. This is primarily attributed to the Cu film exhibiting greater creep/elastic deformation under higher compressive stress conditions. Furthermore, these experimental findings are supported by the surface diffusion creep model. Therefore, our study confirms that compressive stress affects the Cu–Cu bonding interface, emphasizing the need to consider the depth of Cu joints during process design.

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