Effect of Cu incorporation on structural and optical properties of nanocrystalline CdSe (nc-CdSe:Cu) thin films

Sharma, Kriti; Al-Kabbi, Alaa S.; Saini, G. S. S.; Tripathi, S. K.

doi:10.1016/j.jallcom.2012.06.090

Cited by 26 publications

(7 citation statements)

References 38 publications

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“…A suitable value of n is used to linearize the graph. The best fit is found to be for n = 1/2 which indicates the direct allowed transition [9]. The optical band gap values are listed in the Table 3, for air annealed and vacuum annealed samples.…”

Section: Optical Propertiesmentioning

confidence: 90%

“…Number of researchers worked on the doping of cadmium selenide [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] and also on photoconductivity, electrical and optical properties of Ag doped CdSe thin films obtained using solution growth, thermal evaporation and ion exchange method [5][6][7][8][9][10][11][12][13][14][15]. CdSe is basically n-type material in bulk as well as in thin film form having a high resistance.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Ag in CdSe thin films prepared using thermal evaporation

Santhosh

Bangera

Shivakumar³

2017

Физика И Техника Полупроводников

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It has been a general practice to dope thin films with suitable dopants to modify the properties of the films to make them more suitable for potential applications. When the dopant concentrations are low, they do not normally affect the structure and morphology of the films. However, it may lead to drastic changes in electronic properties of the films. This might result from the dopant getting incorporated into the lattice of the material of the films. Cadmium selenide is an important compound semiconductor material with an attractive energy band gap. The present work relates to an attempt made to dope CdSe thin films with silver. CdSe : Ag (1 to 5%) thin films were deposited on glass substrates at an optimized substrate temperature of 453 K using thermal evaporation technique. The grown films were analyzed using X-ray diffraction, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDX) techniques. It is observed that undoped CdSe thin films and CdSe : Ag films have hexagonal structure. The grain size was found to increase marginally with an increase in the Ag concentration. The optical band gap of the films determined by optical transmission measurements agree with that of CdSe. Electrical conductivity is observed to increase from 10 −4 to 3.66 ( · cm) −1 on addition of silver. The variation of resistance with temperature indicates that the prepared films consist of CdSe and Ag existing as two separate phases coexisting and contributing individually to the resistivity of the films.

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Section: Optical Propertiesmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Effect of Ag in CdSe thin films prepared using thermal evaporation

Santhosh

Bangera

Shivakumar³

2017

Физика И Техника Полупроводников

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“…The modification of properties of CdSe films upon the incorporation of different dopants such as Cu, O, Bi, Sb and Fe has been the subject of previous reports. A crystallite size increase in CdSe:Cu films along with a concomitant band gap reduction [7], while the effect of copper in the emission of CdSe quantum dots have been reported [8]. Zheng et al studied the incorporation of oxygen in CdSe films.…”

Section: Introductionmentioning

confidence: 99%

Dual-doped CdSe:Cu:O films grown by sputtering using CdSe–CuO composite targets

Lopez

Rodriguez-Melgarejo

Hernández-Landaverde

et al. 2020

J. Phys.: Condens. Matter

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The effects of the simultaneous incorporation of Cu and O in CdSe films grown by sputtering are presented. The Cu and O contents varied between 1 and 5 at.% in films deposited at 150, 200, 250 and 300 °C. Concentrations of 2, 3, 4 and 5 at.% of CuO in the target promoted the formation of copper selenide clusters immersed within the CdSe:Cu:O host. Energy considerations (enthalpy of formation and bond dissociation energy) were used to discuss the absence of copper oxide and the formation of copper selenide aggregates, as well as the film thickness dependence on the concentration of CuO in the target. The band gap of the films ranged from 1.21 to 2.07 eV, depending upon growth conditions. Significant below-band-gap absorption was observed which was ascribed to the copper selenide micro and nano clusters. Good crystalline quality of the films, for high substrate temperatures, was evidenced through the appearance of overtones of the vibrational longitudinal optic modes detected by Raman micro spectroscopy. It was determined that the electronic properties, optical transmission and electrical conductivity depended on the chemical composition and crystalline structure. This characteristic is relevant because through copper and oxygen co-doping is possible to control these technologically important physical properties of CdSe in a simple and reliable manner.

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“…CBD method found its sound application in photovoltaics. To increase the performance of CdSe nanocrystalline thin films, many researcher used the dopant impurities and made thin film of CdSe:Te [16], CdSe:In [17,18], CdSe:Hg [19], CdSe:Cu [20], and CdSe:Mn [21], etc. Present work is intended to increase the performance of nanocrystalline thin films by lanthanides doped in II-VI semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Effect of Sm concentration on optical and electrical properties of CdSe nanocrystalline thin film

Pathak

Pateria

Deshmukh

et al. 2019

Materials Science-Poland

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Present paper reports optical and electrical properties of samarium doped CdSe nanocrystalline thin film which was grown on a glass substrate by chemical bath deposition method (CBD). X-ray diffraction (XRD) analysis revealed that the deposited films were nanocrystalline with sphalerite cubic structure. The average crystallite size calculated from FWHM of XRD peaks was found to be 10.11 nm. The bandgap of the Sm doped CdSe nanocrystalline thin films was calculated to be 1.91 eV to 2.22 eV. The optical absorption edge of undoped (pure) and Sm doped CdSe films was obtained between 650 nm to 640 nm showing blue shift as compared to bulk CdSe. Sm doping further enhanced the photoconductivity of these films. The I-V characteristic confirmed the suitability of prepared films for photosensor applications.

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Effect of Cu incorporation on structural and optical properties of nanocrystalline CdSe (nc-CdSe:Cu) thin films

Cited by 26 publications

References 38 publications

Effect of Ag in CdSe thin films prepared using thermal evaporation

Effect of Ag in CdSe thin films prepared using thermal evaporation

Dual-doped CdSe:Cu:O films grown by sputtering using CdSe–CuO composite targets

Effect of Sm concentration on optical and electrical properties of CdSe nanocrystalline thin film

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