Effect of Current Density and Plating Time on Cu Electroplating in TSV and Low Alpha Solder Bumping

Jung, Dong-Ho; Sharma, Ashutosh; Kim, Keong-Heum; Choo, Yong-Chul; Jung, Jae Pil

doi:10.1007/s11665-015-1394-4

Cited by 32 publications

(27 citation statements)

References 21 publications

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“…[39,40] Recently, Sharma et al developed CeO 2 nanoparticle reinforced Sn-Ag alloy by pulse co-electrodeposition technique and found a great enhancement in strength, microstructure, and successfully manipulated the residual stress to mitigate of dangerous tin whiskers. [41] …”

Section: Synthesis Of Nanocomposites Soldersmentioning

confidence: 99%

“…The magnitude of the net forces thus produced depends on the bath parameters and the processing conditions of the system. [41] …”

Section: Particle Concentration and Sizementioning

confidence: 99%

“…This type of behavior has been also observed by Sharma et al for Sn-CeO 2 and Sn-Ag/CeO 2 nanocomposites. [41,95] Babaghorbani et al studied the electrical properties of nanocomposite solders in detail and reported that nano-sized reinforcements is advantageous in not degrading the electrical conductivity of the device, while micron sized particles can degrade the conductivity values . [96] This further confirms the unique properties of nanocomposite solders for electromigration property microelectronic packaging devices.…”

Section: Electrical Conductivitymentioning

confidence: 99%

“…[18,22,23,41,95,98,99] The melting points of the nanocomposite solders generally decreases with an increase in the fraction of the nanoparticles in the matrix. Liu et al reported that Sn-Ag-Cu/nano-SiC showed a reduction in melting point compared to monolithic Sn-Ag-Cu alloy.…”

Section: Melting Pointmentioning

confidence: 99%

“…[22] Recently, Sharma et al have found a decreased melting point of Sn-CeO 2 and Sn-Ag/CeO 2 nanocomposites and explained this behavior to the refinement of matrix grains after addition of nanoparticles. [41,95] …”

Section: Melting Pointmentioning

confidence: 99%

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Pulse Electrodeposition of Lead-Free Tin-Based Composites for Microelectronic Packaging

Sharma¹,

Das²,

Das³

2016

Electrodeposition of Composite Materials

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This chapter provides a detailed overview of the various Sn-based composites solders reinforced with ceramic nanoparticles. These solders are lead free in nature and are produced by various process like powder metallurgy, ball milling, casting as well as simple and economic pulse co-electrodeposition technique. In this chapter, various electrodeposited composite solders, their synthesis, characterization, and evaluation of various properties for microelectronic packaging applications, such as microstructure, microhardness, density and porosity, wear and friction, electrochemical corrosion, melting point, electrical resistivity, and residual stress of the monolithic Sn-based and (nano)composite solders have been presented and discussed. This chapter is divided into the following sections: such as introduction to microelectronic packaging, synthesis routes for solders and composites, various nanoreinforcement, and the mechanism of incorporation in solder matrix, the pulse co-electrodeposition technique, the various factors affecting composite deposition, and the improved properties of composite solders over monolithic solders for microelectronic packaging applications are also summarized here.

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Section: Synthesis Of Nanocomposites Soldersmentioning

confidence: 99%

“…The magnitude of the net forces thus produced depends on the bath parameters and the processing conditions of the system. [41] …”

Section: Particle Concentration and Sizementioning

confidence: 99%

Section: Electrical Conductivitymentioning

confidence: 99%

Section: Melting Pointmentioning

confidence: 99%

Section: Melting Pointmentioning

confidence: 99%

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Pulse Electrodeposition of Lead-Free Tin-Based Composites for Microelectronic Packaging

Sharma¹,

Das²,

Das³

2016

Electrodeposition of Composite Materials

Self Cite

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A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

Xia,

Zhang,

et al. 2024

Adv Eng Mater

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Through‐silicon via (TSV) technology realizes high‐density interconnections within and between different dies (chips) by vertically drilling holes in silicon and filling them with various conductive materials. It is an effective way to achieve miniaturization, lightweight, and multi‐functionality in post‐Moore microelectronics. In this review, the process optimization in TSV preparation, various filling techniques, and different filler materials are comprehensively summarized and discussed. It also delves into the characterization and reliability analysis of TSV performance under multi‐physical fields of mechanical, thermal, and electrical. Moreover, the review explores the challenges and solutions for TSVs in regards of integration/packaging and cost aspects. This review can be used to understand the latest research progresses and applications of TSVs, and provide reference and guidance for future research and applications for advanced TSV technology.

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The shape evolution and application studies of electrodeposited bumps in electroforming

et al. 2018

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Effect of Current Density and Plating Time on Cu Electroplating in TSV and Low Alpha Solder Bumping

Cited by 32 publications

References 21 publications

Pulse Electrodeposition of Lead-Free Tin-Based Composites for Microelectronic Packaging

Pulse Electrodeposition of Lead-Free Tin-Based Composites for Microelectronic Packaging

A State‐of‐the‐Art Review of Through‐Silicon Vias : Filling Materials, Filling Processes, Performance, and Integration

The shape evolution and application studies of electrodeposited bumps in electroforming

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