Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw

Costa, Erick Cardoso; Xavier, Fábio Antônio; Knoblauch, Ricardo; Binder, Cristiano; Weingaertner, Walter Lindolfo

doi:10.1016/j.solener.2020.07.018

Cited by 53 publications

(15 citation statements)

References 24 publications

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“…As these processing parameters determine the depth of cut per cutting edge and forces increase with increasing depth of cut [17,29,30], these results were to be expected. The study further confirms increasing roughness with increasing feed speed [3,33] and decreasing cutting speed [3]. The lower significance of grain density on process forces has been observed by Pala et al [17] for cutting silicon.…”

Section: Discussionsupporting

confidence: 79%

Experimental investigation of the machining characteristics in diamond wire sawing of unidirectional CFRP

Seeholzer

Süssmaier

Kneubühler

et al. 2021

Int J Adv Manuf Technol

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Especially for slicing hard and brittle materials, wire sawing with electroplated diamond wires is widely used since it combines a high surface quality with a minimum kerf loss. Furthermore, it allows a high productivity by machining multiple workpieces simultaneously. During the machining operation, the wire/workpiece interaction and thus the material removal conditions with the resulting workpiece quality are determined by the material properties and the process and tool parameters. However, applied to machining of carbon fibre reinforced polymers (CFRP), the process complexity potentially increases due to the anisotropic material properties, the elastic spring back potential of the material, and the distinct mechanical wear due to the highly abrasive carbon fibres. Therefore, this experimental study analyses different combinations of influencing factors with respect to process forces, workpiece surface temperatures at the wire entrance, and the surface quality in wire sawing unidirectional CFRP material. As main influencing factors, the cutting and feed speeds, the density of diamond grains on the wire, the workpiece thickness, and the fibre orientation of the CFRP material are analysed and discussed. For the tested parameter settings, it is found that while the influence of the grain density is negligible, workpiece thickness, cutting and feed speeds affect the process substantially. In addition, higher process forces and workpiece surface temperatures do not necessarily deteriorate the surface quality.

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Section: Discussionsupporting

confidence: 79%

Experimental investigation of the machining characteristics in diamond wire sawing of unidirectional CFRP

Seeholzer

Süssmaier

Kneubühler

et al. 2021

Int J Adv Manuf Technol

View full text Add to dashboard Cite

show abstract

“…Thus, there is a need to understand the mechanical performance of monocrystalline silicon and find out the reasons that limit the quality of wafer cutting. Except for the improvement of diamond-wire cutting itself, mechanical anisotropy [ 5 ] is considered as one of the limitations for the optimization of the cutting parameter [ 6 ], because the properties related to the orientation could affect the mechanical performance while producing the silicon wafers. For example, the growth of monocrystalline silicon is usually along with the <111> orientation family and the wire saw cutting is perpendicular to the <110> orientation family to minimize product loss.…”

Section: Introductionmentioning

confidence: 99%

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

et al. 2021

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Mechanical anisotropy and point defects would greatly affect the product quality while producing silicon wafers via diamond-wire cutting. For three major orientations concerned in wafer production, their mechanical performances under the nanoscale effects of a point defect were systematically investigated through molecular dynamics methods. The results indicated anisotropic mechanical performance with fracture phenomena in the uniaxial deformation process of monocrystalline silicon. Exponential reduction caused by the point defect has been demonstrated for some properties like yield strength and elastic strain energy release. Dislocation analysis suggested that the slip of dislocations appeared and created hexagonal diamond structures with stacking faults in the [100] orientation. Meanwhile, no dislocation was observed in [110] and [111] orientations. Visualization of atomic stress proved that the extreme stress regions of the simulation models exhibited different geometric and numerical characteristics due to the mechanical anisotropy. Moreover, the regional evolution of stress concentration and crystal fracture were interrelated and mutually promoted. This article contributes to the research towards the mechanical and fracture anisotropy of monocrystalline silicon.

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“…The material removal in brittle mode becomes dominant with higher v f , whereas on increasing v c the ductile mode becomes dominant. Both brittle and ductile cutting modes were observed in the sawn surfaces analyzed and this can be a results of anisotropy of the poly-Si as well as of variations in the protrusion and microgeometry of the diamond grits [13]. Pala et al [26] noted that the diamond grits on the wire surface present different microgeometries and hence the levels of protrusion lie within a range.…”

Section: Morphology Of the Sawn Surfacementioning

confidence: 99%

“…Würzner et al [12] studied the effect of v c on the sawn surface of polycrystalline silicon, which revealed the presence of both tensile and compressive residual stress as well as an inhomogeneous surface roughness when using a high v c . Costa et al [13] showed that silicon sawn by electroplated diamond wire sawing undergoes phase transformation on applying v c ≥ 10 m/s. It was revealed that the intensity and bandwidth of the a-Si phase increases gradually in the v c range from 10 to 20 m/s.…”

Section: Introductionmentioning

confidence: 99%

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

Costa

Santos

Carvalho

et al. 2022

Int J Adv Manuf Technol

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This study aimed to evaluate and better understand the mechanical and crystalline responses of polycrystalline silicon sawn by diamond wire sawing. To simplify the multi-wire sawing kinematic, an endless wire saw with a single looped diamond wire was used. The wire cutting speed and feed rate of the sawing process were varied in order to evaluate the characteristics of sawn surface morphology, surface roughness and subsurface damage. The analysis of brittle-ductile transition and residual stress of the sawn surface and silicon chips were performed with Raman spectroscopy. The wear and failure mechanism of the diamond wire were analyzed. The results show that sawn surface is composed of brittle and ductile regions and the predominance of one of these directly affected the surface roughness R a . The ductile cutting mode induced the predominance of microgrooves and ploughing over the sawn surface and led to formation of an amorphous layer with residual compressive stress of up to -192.3 MPa. Micro-cracks in subsurface were identi ed and it reached a minimum depth of 7.2±1.6 µm.Chip fragments and elongated chips were observed and Raman spectra showed that the latter are amorphous. The wire wear analysis indicated that during the cutting there is deformation of the Ni-layer, exposed grits and grit pullout. The main wear mechanisms are Ni-matrix removal and abrasive wear of the diamond grit. A better surface quality of polycrystalline silicon was obtained on increasing wire cutting speed and decreasing feed rate. The results found in this study can help to reach a high quality surface of silicon wafer for photovoltaic application. HighlightsAnisotropy of poly-Si induces to sawn surface composed of brittle and ductile regions and it affected the surface roughness Ductile cutting leads to surface formation with amorphous phases and residual compressive stress On increasing wire cutting speed and decreasing feed rate was obtained a minimum micro-crack depth Chip fragments and elongated chips were observed and Raman spectra showed that the latter are amorphous Wear mechanisms of the diamond wire were Ni-matrix deformation and removal, abrasive wear and grits pullout

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Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw

Cited by 53 publications

References 24 publications

Experimental investigation of the machining characteristics in diamond wire sawing of unidirectional CFRP

Experimental investigation of the machining characteristics in diamond wire sawing of unidirectional CFRP

General Molecular Dynamics Approach to Understand the Mechanical Anisotropy of Monocrystalline Silicon under the Nanoscale Effects of Point Defect

Study on surface integrity and ductile cutting of PV polycrystalline silicon and wear mechanisms of electroplated diamond wire

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