2005
DOI: 10.1063/1.2012524
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Effect of damage by 2 MeV He ions and annealing on Hc2 in MgB2 thin films

Abstract: a) J. Kim, a) B. Wilkens, b) N. Newman, a),b),g) J.M. Rowell, a) A.V. Pogrebnyakov, c),d),e) X.X. Xi, c),d),e) J.M. Redwing, d),e) S.Y. Xu, c),e) Qi Li, c),e) and B.H. Moeckly f)

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Cited by 38 publications
(77 citation statements)
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“…The defects induced by neutron irradiation act as inter-and intra-band scattering centers; the intraband scattering causes a reduction of the electron mean free path and is responsible for the growth of the normalstate resistivity. The reduction of T c has been ascribed to both the scattering processes and the smearing of the electron density of states near the Fermi surface [11,13].…”
Section: Experimental Apparatus and Samplesmentioning
confidence: 99%
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“…The defects induced by neutron irradiation act as inter-and intra-band scattering centers; the intraband scattering causes a reduction of the electron mean free path and is responsible for the growth of the normalstate resistivity. The reduction of T c has been ascribed to both the scattering processes and the smearing of the electron density of states near the Fermi surface [11,13].…”
Section: Experimental Apparatus and Samplesmentioning
confidence: 99%
“…In order to carry out investigation on this topic, essentially two methods have been used to insert defects and/or disorder in MgB 2 : chemical substitution and damage by irradiation [9,10,11,12,13]. In any cases, the inclusion of defects, besides to change the inter-band scattering, might increase the upper critical field and the critical current, strongly affecting the fluxon dynamics.…”
Section: Introductionmentioning
confidence: 99%
“…For example, the ρ 40 can be corrected by a factor that represents the aerial currentcarrying fraction (γ = ρ 40 / ρ 40,ideal ≅ ρ 40 / 7.4 μΩ.cm) [6,7] to obtain a ρ 40K,corrected that is characteristic of the intra-granular resistivity alone. Measurements of T c and the corrected value of the residual resistivity of MgB 2 , after both ion and neutron irradiation [6,8] suggest a universal linear dependence, with T c extrapolating to 0 K for ρ 40k,corrected values of ~90 μΩ.cm.…”
Section: Effect On Critical Current and Slope Of Upper Critical Fieldmentioning
confidence: 99%
“…Unfortunately, substitutional defects introduce charge doping, which complicates the understanding of the role of IBS itself. In this respect, irradiation with neutrons 9, , , , 10 11 12 13 and alpha particles 14,15 is very appealing since it produces homogeneous defect structures, without introducing charge doping. With increasing irradiation resistivity increases monotonously and T c decreases correspondingly; in heavily irradiated samples superconductivity is completely suppressed.…”
mentioning
confidence: 99%