2001
DOI: 10.1016/s0169-4332(00)00683-8
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Effect of dc bias on the compositional ratio of WNX thin films prepared by rf-dc coupled magnetron sputtering

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Cited by 25 publications
(7 citation statements)
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“…5(a μΩ-cm for T s = 700 °C. That is, the WN x layers in this study exhibit a range of resistivities from 1.1-4.5 ×10 -5 Ω-m, which is within the range of previously reported values for WN x of 0.1-5.0×10 -5 Ω-m [26,37,41,[64][65][66], while other reports on WN x layers including samples obtained by MOCVD or sputtering at high working gas pressures or high ion bombardment energies indicate even higher resistivities ranging from 10 -4 -10 -1 Ω-m [33,38,39,44,67,68], which is likely due to their lower crystalline quality. The layers grown at T s = 800 °C, which, as discussed above, consist primarily of BCC-W grains and have a low nitrogen concentration corresponding to x = 0.06, 0.06, and 0.04, respectively, have resistivities of 50±2, 42±1, and 48±2 μΩ-cm.…”
Section: Resultssupporting
confidence: 88%
“…5(a μΩ-cm for T s = 700 °C. That is, the WN x layers in this study exhibit a range of resistivities from 1.1-4.5 ×10 -5 Ω-m, which is within the range of previously reported values for WN x of 0.1-5.0×10 -5 Ω-m [26,37,41,[64][65][66], while other reports on WN x layers including samples obtained by MOCVD or sputtering at high working gas pressures or high ion bombardment energies indicate even higher resistivities ranging from 10 -4 -10 -1 Ω-m [33,38,39,44,67,68], which is likely due to their lower crystalline quality. The layers grown at T s = 800 °C, which, as discussed above, consist primarily of BCC-W grains and have a low nitrogen concentration corresponding to x = 0.06, 0.06, and 0.04, respectively, have resistivities of 50±2, 42±1, and 48±2 μΩ-cm.…”
Section: Resultssupporting
confidence: 88%
“…Various deposition techniques have been studied for production of metal nitride thin films [12][13][14][15][16]. During the recent decades, the dense plasma focus (DPF) device [17,18] has been used for many applications such as generation of energetic ions, neutrons, X-rays and relativistic electrons [19] and deposition of thin films [20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…For being widely used in optical and microelectronic applications, many researchers, such as Uekubo et al (1996), Park et al (1997) and Suh et al (1999), have extensively studied and characterized monolayer WNy coatings regarding crystal structure with respect to nitrogen content: Firstly, crystalline structure and nitrogen content of WNy are closely related to deposition conditions, such as nitrogen partial pressure, sputtering power (So et al, 1988), target dc bias voltage, and deposition and post-treating temperature (Volders et al, 2007), etc. For example, with target dc bias voltage varying from −100 to −500 V, Migita et al (2001) found that the sequential changes are achieved from the WN phase with (1 0 0) plane, W 2 N phase with (1 1 1) and (2 0 0) planes, and finally to the amorphous phase. Secondly, nitrogen content within WNy directly determines crystal structure of WNy.…”
Section: Resultsmentioning
confidence: 99%