Effect of Deep Level Impact Ionization on Avalanche Breakdown in Semiconductor p-n Junctions

Abstract

Using a simple model, we have investigated the effect of deep level impact ionization on avalanche breakdown in GaAs, InP, and Si p±n junctions. The ionization coefficients are obtained using Robbins' formalism [phys. stat. sol. (b) 97, 9 (1980)]. Results are presented for trends in the dependence of the breakdown voltage and electric field on the doping densities and on the deep level density and energy. Our results show that, for fixed doping densities, the breakdown voltage and field both decrease with increasing deep level density. Further, we find that their sensitivity to the deep level density is much stronger for levels deep within the bandgap than for those near a band edge, correlating with the decreased ionization threshold energy for shallower levels. We also find that the breakdown voltage and critical field in Si p±n junctions are stronger functions of the deep level density and energy than in GaAs and InP junctions.

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

“…A similar suggestion has been that impact ionization of impurities, rather than band-to-band ionization, is responsible for the observed I-V characteristics. [28][29][30] Various regimes and additional processes have been identified. 31 Experimental results by Willing and Maan in semi-insulating GaAs 32 have revealed an onset of field-enhanced trapping at lower fields.…”