Effect of Density Gradient on the Acousto-Electric Wave Instability in Ion-Implanted Semiconductor Plasmas

Abstract

Using hydrodynamic model of inhomogeneous plasma, an analytical investigation of excitation of acousto-electric mode was made in n-type piezoelectric ion-implanted semiconductor plasma. By employing the multi-fluid balance equations along with the elastic and Maxwell equations, a compact dispersion relation for the cases in which colloidal grains are either stationary (ϑ 0d = 0) or streaming (ϑ 0d = 0) is derived. We find that the choice of homogeneous medium is favorable in achieving higher acoustic gain per radian and the results of the investigation should be useful in understanding the characteristics of longitudinal acousto-electric wave in ion-implanted piezoelectric semiconductor whose main constituents are electrons and negatively charged colloidal particles.

A Note on Nonlinear Parametric Interaction of Acoustic Waves in Magnetised Nondegenerate Piezoelectric Semiconductor — A Numerical Approach

“…In this equation , , and having the mass density of the crystal, displacement of the lattice, phenomenological damping parameter of acoustic mode and crystal elastic constant respectively. In equation (2) we neglect the effect due to 0 × 1 by assuming that the shear acoustic wave is propagating along such a direction of the crystal that it produces a longitudinal electric field e.g in n-Insb, if k is taken along (011) and the lattice displacement u is along (100) the electric field induced by the wave is a longitudinal field [10].…”

“…Parametric amplification of acoustic waves in a thermopiezosemi conducting medium has been discussed by M. Salimullah et al [8], Mandal & Gupta [9]. Ghosh & Khare [10] have studied acoustic electric wave instability in Ion-Implanted semiconductor plasmas. P. K. Mandal [11] has studied the parametric amplification of acoustic wave in presence of transverse magnetostatic field in n-type piezoelectric semiconducting media by numerical approach.…”

Magnetosonic waves in ion trapped semiconductor chip plasma with effect of exchange correlation potential and relativistic degeneracy

“…For further manufacturing of modified semiconductor devices, ion-implantation techniques are generally employed in which ions in host materials alter their characteristics through introduction of metal ions (such as Ag + , Cu + , Fe + etc). In the recent past, ion-implanted semiconductor (IIS) plasmas have been explored [7][8][9][10], where quantum effects were studied. Also, Cd + ion trapped in semiconductor gallium-arsenide (GaAs) heterostructure chip has been fabricated [11] which gives an interesting opportunity of three species electronhole-ion (e-h-i) semiconductor magnetoquantum plasmas to determine their quantum collective effects on dispersive properties of magnetosonic propagation waves.…”

Phonon-Plasmon Interactions in Inhomogeneous Semiconductor Plasma Embedded with Nanoparticle Cluster

“…As we have discussed above, this particle drift is the only parameter which actually decides the amplification/attenuation of the acoustic wave while propagating through a semiconductor medium. Recently, many investigators have reported their efforts of investigating acoustic wave amplification in homogeneous [19][20][21] as well as inhomogeneous [22][23][24][25] semiconductor plasma medium under several physical regimes and field geometries.…”