Effect of Depositing a-Si Thickness on Characteristics of Electric Double Probe Exposed to a Silane Plasma

Abstract

To study the change in characteristics of a double probe exposed to silane plasma, we measured the V–I characteristics of a double probe for various a-Si thicknesses, and compared the experimental results with results calculated by a simple model. It is found that the change in V–I characteristics of the double probe was caused by the deposition of resistive material on probe surface, and it is expected that the change in the V–I characteristics of a double probe will be utilized to monitor the thickness of a-Si deposition.