Effect of deposition conditions on internal stresses and microstructure of reactively sputtered tungsten nitride films

Shen, Yao; Mai, Y.W.

doi:10.1016/s0257-8972(00)00664-2

Cited by 22 publications

(10 citation statements)

References 16 publications

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“…The binding energy of N 1 s at 397.5 eV is consistent with W-N bond [25]. The N 1 s peak at 400.9 eV can be attributed to the atoms or molecules appearing at the interstitial positions of WN/ CC [24,26]. All these results strongly suggest that WN nanowires array was successfully grown on CC substrate.…”

Section: Resultssupporting

confidence: 60%

Self-standing Ni-WN heterostructure nanowires array: A highly efficient catalytic cathode for hydrogen evolution reaction in alkaline solution

Xing

Wang

et al. 2016

Electrochimica Acta

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Section: Resultssupporting

confidence: 60%

Self-standing Ni-WN heterostructure nanowires array: A highly efficient catalytic cathode for hydrogen evolution reaction in alkaline solution

Xing

Wang

et al. 2016

Electrochimica Acta

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“…Using the chemical composition found through XPS and RBS analyses, the density and index of refraction (n b ) values for the bulk materials were calculated using the fraction of W-O and W-N bonds within WO x N y . The fractions of each bond was then used to estimate the new value of the bulk material by assuming the index of refraction for bulk WO 3 and WN, at~630 nm, to be 2.0 [48] and 3.8 [49,50], respectively, and their bulk densities to be 7.16 g/cm 3 [51] and 17.7 g/cm 3 [52,53], respectively. The measured values n at~630 nm from SE for W-O-N films were then used to calculate the approximate values of the density for the deposited W-O-N thin films as a function of nitrogen flow rate.…”

Section: Resultsmentioning

confidence: 99%

Nitrogen incorporation and composition facilitated tailoring of the optical constants and dispersion energy parameters of tungsten oxynitride films

Nunez

Tarango

Murphy

et al. 2016

Journal of Alloys and Compounds

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a b s t r a c tOptical properties, including the index of refraction, extinction coefficient and band gap of 100 nm thick tungsten oxynitride (W-O-N) films are reported. In addition, the Wemple and DiDomenico (WDD) model was used to calculate the dispersion energies and oscillator energies of the films, establishing a correlation among the films' optical, chemical, and physical properties, as a function of nitrogen content. Nitrogen concentration in the W-O-N films was varied by adjusting the nitrogen gas flow rate from 0 to 20 sccm while keeping total gas flow (nitrogen þ oxygen þ argon) constant at 40 sccm. Both the index of refraction (n) and extinction coefficient (k) of W-O-N films demonstrated a high degree of sensitivity to the nitrogen content during deposition. The optical constants of films fabricated without any nitrogen correspond to transparent W-oxide (WO 3 ) where n 550 ¼ 2.1 and k 550 ¼ 0.0. The magnitude of the spectral response for both n and k tends to increase with increasing nitrogen content. Systematic increases of the films' nitrogen content lead to the formation of W-oxide (E g z 3 eV) / W-O-N oxynitride semiconductor (E g z 2 eV) / N-rich W-O-N semi-metal (E g < 2 eV) / WN 2 type metallic transition was evident in dispersion profiles of n and k for W-O-N films with increasing nitrogen content. The corresponding mechanical characteristics, namely hardness (H) and Young's modulus (E), attain a maximum of 4.46 GPa and 98.5 GPa, respectively, at a nitrogen flow rate of 5 sccm, at which point H and E values decrease to attain 3.57 GPa and 72.91 GPa, respectively. The trend observed in H and E values correlate with the W-O and W-N bonds formation in W-O-N along with the interruption of local epitaxy attributed to increasing nitrogen content within the growth chamber. A correlation among the nitrogen content, optical constants and physical properties, along with the associated dispersion model, is presented to account for the optical properties of sputter-deposited W-O-N films. The results demonstrate that tailoring the properties of W-O-N films for desired applications can be achieved by tuning the nitrogen content and chemical composition.

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“…Tungsten nitrides have been widely studied for their use as diffusion barriers in microelectronics [18][19][20], gate electrodes in semiconductor devices [21,22], hard coatings to protect from mechanical wear [23][24][25], or as Schottky contacts [27]. Several of the early studies have contributed extensively towards the understanding of W-N system, especially the knowledge of fundamental relationship between different parameters, such as deposition conditions and their effect on the internal stress, microstructure, and elemental concentration [18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Similarly, tungsten oxides have been studied for a wide variety of electrical, optical, and energy related applications [1][2][3][4][5][6][7][8][9][10][11][12] to longer wavelengths, and concluded that the conductivity of said films is lowered with increased nitrogen content [33].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

et al. 2015

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Tungsten oxynitride (W-O-N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W-O-N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W-O-N films were evaluated. All the W-O-N films measured were shown to be amorphous using x-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E g ), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W-O-N system, E g was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO 3 and highly nitrided W-O-N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO 3 to W-O-N composite oxynitride films.

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Effect of deposition conditions on internal stresses and microstructure of reactively sputtered tungsten nitride films

Cited by 22 publications

References 16 publications

Self-standing Ni-WN heterostructure nanowires array: A highly efficient catalytic cathode for hydrogen evolution reaction in alkaline solution

Self-standing Ni-WN heterostructure nanowires array: A highly efficient catalytic cathode for hydrogen evolution reaction in alkaline solution

Nitrogen incorporation and composition facilitated tailoring of the optical constants and dispersion energy parameters of tungsten oxynitride films

Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

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