Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices

Abstract

This work investigates the effect of process temperature on one-transistor-one-capacitor ferroelectric random access memory (1T1C FeRAM) cells fabricated with a HfZrOx ultrathin film applied as the 1T1C capacitor. Traditionally, the capacitor in 1T1C devices is grown on the drain, and such a structure is a type of dynamic memory. Such a structure, however, is prone to the leakage current phenomenon, which causes the amount of charge stored in the capacitor to be insufficient, leading to inaccurate data reading. To solve this problem, an alternative 1T1C structure placing the capacitor on the gate terminal has been proposed. For these alternative 1T1C FeRAM devices, our experimental results indicate that the deposition temperature of the ferroelectric layer has a significant effect on the basic electrical properties. To clarify this phenomenon, we propose a physical model which is based on the effect of the deposition temperature on the HfZrOx grain size.

Phase transformation on HZO ferroelectric layer in ferroelectric random-access memory induced by x-ray irradiation

“…Ferroelectric random-access memory (FeRAM) has attracted interest and actively investigated since ferroelectric HfO 2 was discovered to be compatible with complementary metaloxide-semiconductor (CMOS) processes. Superior performances such as simple metal/ferroelectric/metal structure, short program/erase time, low power consumption and high integration density [5][6][7][8] have been realized.…”

Effect of Process Temperature on Density and Electrical Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

“…The regions wherein the o-, t-, and m-phases of HZO are formed vary depending on grain size and temperature. Therefore, density improvement in the deposition process is expected through the stabilization of the o-phase and increasing the grain size through low-temperature deposition using PEALD [ 10 , 23 ]. In addition, to the best of the authors’ knowledge, there is no report on the relationship between the PEALD process temperature and changes in the electrical properties with respect to HZO density.…”

Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

“…With the high demand for high-density memory storage applications, alternative memory technology has been intensively investigated for replacing conventional charge-based flash memory which suffers from charge loss and program errors with device scaling down. To break the bottle-neck of device scaling, several emerging memory technology attracts considerable attention, such as phase-change memory (PCM) [ 1 ], ferroelectric random access memory (FeRAM) [ 2 , 3 ], magnetic resistive random access memory (MRAM) [ 4 ], and resistive random access memory (RRAM). Among them, the resistive random access memory (RRAM) device holds great potential as an emerging candidate because of its simple design, high-speed operation, excellent scalability, and low power consumption [ 5 , 6 , 7 , 8 ].…”