Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by chemical bath deposition method

Hone, Fekadu Gashaw; Ampong, Francis Kofi

doi:10.1016/j.matchemphys.2016.08.034

Cited by 32 publications

(16 citation statements)

References 21 publications

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“…Similar observation was reported by different authors for doped‐PbS thin films . Other structural parameters strain and dislocation density was calculated from the formulas in Gulen and Hone and Ampong and their results are listed in Table .…”

Section: Resultssupporting

confidence: 81%

“…Chemical bath deposition method is one of the most suitable routes to produce uniform, adherent, and good reproducibility films. Moreover, currently, it attracts considerable attention because of its low temperature compatibility, large area deposition with better homogeneity, and cost effectiveness . We report for the first time that ethanolamine is being used as a complexing agent with ammonia in the present study to deposit PbS:Sn thin films.…”

Section: Introductionmentioning

confidence: 90%

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Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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In the present report, undoped and tin (Sn)-doped lead sulfide thin films were synthesized via chemical bath deposition method. The effects of Sn molar concentration on the optical, structural, and morphological properties were systematically studied. The concentration of Sn in the chemical bath was characterized by the ratio of [Sn +2 ]/[Pb +2 ] and varied from 0 to 15 at.%. Both doped and undoped thin films were polycrystalline in nature with a face-centered cubic crystal structure; however, the preferred orientations of the crystallites were varied along the (111) and (200) planes with Sn-doping concentration. The X-ray powder diffraction results also showed that peak intensities and the crystalline size were decreased with increasing Sn concentration.The lattice constant varied with Sn concentration and found in the range of 6.020 to 5.944 Å. The variation of Sn concentration in PbS:Sn thin films were confirmed by energy dispersive X-ray analyses study. The scanning electron microscope and atomic force microscopy studies revealed that Sn doping had a critical role on the surface roughness and morphology of the PbS:Sn thin films. The optical band gap study showed that the band gap of PbS:Sn thin films were engineered from 0.676 to 1.345 eV because of incorporation of Sn +2 ions via cost-effective chemical route.Room temperature photoluminescence spectra showed a well-defined peak at 427 nm and shoulders at 405 and 462 nm for all Sn-doped and undoped PbS samples.

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Section: Resultssupporting

confidence: 81%

Section: Introductionmentioning

confidence: 90%

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Hone

Dejene

Echendu

2018

Surface & Interface Analysis

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“…This is confirmed by the average crystallite size estimated from the XRD data for samples GE2 and GE3. Henceforth, the change in optical band gap is inversely dependent on the diameter of the crystalline size [32,45,46], which explains the decrease in the observed band gap E g with increase in deposition temperature [46,47]. Similar results have been reported previously for optical absorption of Ga-La-S thin film [12] samples fabricated by employing different deposited energy densities.…”

Section: Optical Properties Of Er 3+ -Doped Ga-la-s Thin Filmssupporting

confidence: 86%

“…A similar observation had been reported previously by Frantz et al [14], where the author concluded that such crystal phase's formation can be attributed to quenching and/or heat treatment of the Ga-La-S target glass. Additionally, the crystallite size was calculated from the XRD data for peaks occurring around 2θ = 25° and 29° through Debye-Scherer formula [32]:…”

Section: The Structural Characteristics Of the Er 3+ -Dopedmentioning

confidence: 99%

Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures

et al. 2018

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The properties of Er 3+-doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV-Vis-NIR spectroscopy. The results show that by increasing the substrate temperature, the deposited layer thickness increases and the crystallinity of the films changes. The room temperature photoluminescence and lifetimes of the 4 I 13/2 → 4 I 15/2 transition of Er 3+ are reported in the paper.

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“…The effect of deposition time on the structural, morphological and optical band gap of lead selenide thin films synthesized by CBD, has been reported [6]. Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by CBD, has also been reported [7]. Hone et al [8] reported the synthesis and characterization of CdSe nanocrystalline thin film deposited by the CBD technique and in another paper, reported the effect of annealing on the structural, morphological and optical band gap of nanocrystalline cadmium selenide thin films synthesized by CBD Technique [9].…”

Section: Introductionmentioning

confidence: 96%

Effect of Annealing on the Structure and Optical Properties of Lead Selenide and Cadmium Selenide Thin Film Prepared by Chemical Bath Deposition

BANDOH¹,

Nkrumah²,

Ampong³

et al. 2021

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The effect of annealing on the structural and optical properties of lead selenide and cadmium selenide thin films prepared by chemical bath deposition has been studied. The films were annealed in air for a duration of 1 hour at temperatures of 673 K for CdSe and 573 K for PbSe. Both the as-deposited and annealed films were characterized by X-ray diffraction and optical absorption spectroscopy. The as–deposited CdSe films had the cubic structure with preferred orientation along (111) plane. However, after annealing there was a phase change from the cubic structure to the hexagonal structure with preferred orientation along the (002) plane. Both the as-deposited and annealed PbSe had the cubic structure with preferred orientation along the (200) plane. Other structural parameters such as the average crystallite size increased, whilst the dislocation density and strain decreased, suggesting a reduction in lattice imperfections after annealing. Optical absorbance of the films increased after annealing with a corresponding decrease in the direct band gap from 1.78 eV to 1.52 eV for CdSe, and 1.47 eV to 1.35 eV for PbSe. These results suggest an improvement in optical and structural properties after annealing.

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Effect of deposition temperature on the structural, morphological and optical band gap of lead selenide thin films synthesized by chemical bath deposition method

Cited by 32 publications

References 21 publications

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Band gap tailoring of chemically synthesized lead sulfide thin films by in situ Sn doping

Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures

Effect of Annealing on the Structure and Optical Properties of Lead Selenide and Cadmium Selenide Thin Film Prepared by Chemical Bath Deposition

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