Effect of deposition time on structural and optical properties of ZnSe thin films grown by CBD method

Khalfi, R.; Talantikite-Touati, Djahida; Tounsi, A.; Merzouk, H.

doi:10.1016/j.optmat.2020.109989

Cited by 22 publications

(4 citation statements)

References 34 publications

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“…Wherein, the refractive indexes denoting wavelength λ 1 and λ 2 in the transmission spectra are represented by n 1 and n 2 respectively. Moreover, the transmission curve exhibits fluctuations as a result of the interference effects, signifying the uniformity of the films that were deposited [42].…”

Section: Photoconductivity Measurementmentioning

confidence: 99%

Photo-response in chemically synthesized ZnSe nanorod for its application as photosensor

Handique,

Barman,

Kalita

2023

Phys. Scr.

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Zinc Selenide nanorods with varying concentration have been synthesized through the chemical bath deposition method. Concentration-dependent structural and electronic properties of synthesized ZnSe nanorods have been studied in this work. XRD and HRTEM studies indicate the formation of cubic polycrystalline ZnSe nanostructures. The effect of molar concentration, incident light intensity and wavelength on various parameters of fabricated ZnSe based photodetectors have been studied. The photocurrent and thereby other parameters such as photosensitivity, responsivity, detectivity and electron quantum efficiency are seen to decrease with the increase of Zn ion concentration. To investigate the fundamental nature of the dependency of photocurrent on light intensity, Rose’s model of photoconduction is used and the intensity-photocurrent characteristics exhibit sub linear nature. The parameters of ZnSe based photodetectors are calculated and correlated with molar concentration. The effects of incident light intensity and the wavelength on the photodetector properties of ZnSe photodetector are studied thoroughly in this paper.

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Section: Photoconductivity Measurementmentioning

confidence: 99%

Photo-response in chemically synthesized ZnSe nanorod for its application as photosensor

Handique,

Barman,

Kalita

2023

Phys. Scr.

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“…Data samples from forty-three compounds of doped zinc selenide nanostructured semiconducting materials were employed in developing SVR-GA and SPR models for energy gap quantification. The data samples were extracted from different sources in the literature [4,5,7,8,[33][34][35][36][37][38]. The descriptors such as the lattice parameter and the size of the semiconducting compounds were also extracted from the same sources with their corresponding energy gaps.…”

Section: Data Acquisition Description and Statistical Analysismentioning

confidence: 99%

Tailoring the Energy Harvesting Capacity of Zinc Selenide Semiconductor Nanomaterial through Optical Band Gap Modeling Using Genetically Optimized Intelligent Method

et al. 2021

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Zinc selenide (ZnSe) nanomaterial is a binary semiconducting material with unique features, such as high chemical stability, high photosensitivity, low cost, great excitation binding energy, non-toxicity, and a tunable direct wide band gap. These characteristics contribute significantly to its wide usage as sensors, optical filters, photo-catalysts, optical recording materials, and photovoltaics, among others. The light energy harvesting capacity of this material can be enhanced and tailored to meet the required application demand through band gap tuning with compositional modulation, which influences the nano-structural size, as well as the crystal distortion of the semiconductor. This present work provides novel ways whereby the wide energy band gap of zinc selenide can be effectively modulated and tuned for light energy harvesting capacity enhancement by hybridizing a support vector regression algorithm (SVR) with a genetic algorithm (GA) for parameter combinatory optimization. The effectiveness of the SVR-GA model is compared with the stepwise regression (SPR)-based model using several performance evaluation metrics. The developed SVR-GA model outperforms the SPR model using the root mean square error metric, with a performance improvement of 33.68%, while a similar performance superiority is demonstrated by the SVR-GA model over the SPR using other performance metrics. The intelligent zinc selenide energy band gap modulation proposed in this work will facilitate the fabrication of zinc selenide-based sensors with enhanced light energy harvesting capacity at a reduced cost, with the circumvention of experimental stress.

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“…These problems can be solved by improving the method of preparing DOI: 10.1002/adom.202300311 nano-thin film. [9] One solution is to dope the host material. [10] Transition metal (TM) can easily form complexes in the presence of vacant d atom orbit.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Novel Heterodimensional Structured Chalcogenide Semiconductor Nano‐Film by Pulsed Laser Deposition Technology

Gao

Wang

2023

Advanced Optical Materials

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Chalcogenide based nano‐films have attracted considerable attention as a new type of semiconductor material in the fields of optical waveguides, laser devices, and solar cells. However, it remains challenging to use them effectively in a variety of fields, mainly due to their intricate fabrication procedures and limited electrical characteristics. In this study, zinc selenide (ZnSe) is doped with molybdenum (Mo) and gallium (Ga). The heterodimensional structured chalcogenide semiconductor nano‐film is obtained by pulsed laser deposition (PLD). The results of scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) confirm that the structure of the nano‐film is compact and the composition is uniformly distributed. The transmittance of all samples is close to 100% in the 400–2000 nm range shown. The P/N type of the film can be controlled by changing the preparation conditions. All the results indicate that the novel heterodimensional structured chalcogenide semiconductor nano‐film in this study has a simple and efficient preparation method, controllable composition, and unique optical/electrical properties. These properties can be used in integrated circuits and photovoltaic power generation.

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Effect of deposition time on structural and optical properties of ZnSe thin films grown by CBD method

Cited by 22 publications

References 34 publications

Photo-response in chemically synthesized ZnSe nanorod for its application as photosensor

Photo-response in chemically synthesized ZnSe nanorod for its application as photosensor

Tailoring the Energy Harvesting Capacity of Zinc Selenide Semiconductor Nanomaterial through Optical Band Gap Modeling Using Genetically Optimized Intelligent Method

Preparation of Novel Heterodimensional Structured Chalcogenide Semiconductor Nano‐Film by Pulsed Laser Deposition Technology

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