Effect of deposition time on chemical bath deposited CdS thin films properties

Hariech, S.; Bougdira, J.; Belmahi, M.; Medjahdi, Ghouti; Aida, M.S.; Zertal, Abdennour

doi:10.1007/s12034-022-02661-0

Cited by 6 publications

(3 citation statements)

References 27 publications

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“…As for the XRD analysis of CdS‐SnO 2 (Figure 1d), no new characteristic peak appeared. This is due to the peak overlap between the CdS hexagonal phase PDF#77‐2306 (cubic phase PDF#10‐0454) [ 28 ] and the tetragonal phase of SnO 2 (PDF#46‐1088). Next, the deposition time has been shortened to 1 min, and the successful deposition of the metal sulfide can be confirmed from the high‐resolution XPS spectrum (Figure S2, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr₃ Perovskite Solar Cells

Zhu,

Zhang,

Liu

et al. 2024

Solar RRL

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Although SnO2 has been widely used as the electron transport material (ETM) of the perovskite solar cells (PSCs), the energy level mismatch at the SnO2/CsPbBr3 buried interface is as high as 1 eV, which is disastrous for the CsPbBr3 based PSCs. Here, we introduce a buffer layer of metal sulfide (CdS, ZnS) to solve this problem. The power conversion efficiency (PCE) of CsPbBr3 PSCs has been increased from 8.16% to 9.48% for ZnS‐treated SnO2 (ZnS‐SnO2), and a champion efficiency of 10.61% has been achieved in CdS treated SnO2 (CdS‐SnO2) devices. Aside from the reduced energy loss, the mobility of the SnO2 ETM has been greatly enhanced after the metal sulfide treatment. The CdS‐SnO2 devices also enjoy the benefits of reduced defect density and speeded carrier extraction, contributing to an almost 30% performance enhancement. This 10.61% PCE is among the highly efficient CsPbBr3‐based PSCs reported to date. Finally, Our CdS‐SnO2 devices survive a harsh damp heat test (120°C with a relative humidity of 50%) for a month with less than 15% efficiency loss, demonstrating the superior stability of our CsPbBr3 PSCs.This article is protected by copyright. All rights reserved.

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Section: Resultsmentioning

confidence: 99%

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr₃ Perovskite Solar Cells

Zhu,

Zhang,

Liu

et al. 2024

Solar RRL

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“…The main peaks appeared at 537 nm (2.30 eV) and at about 710 nm (1.75 eV) at room temperature. These could be attributed to the transition from the valence band to the conduction band and excitonic transitions (for example, pairs recombination and emissions where excitonic transitions are due to the cadmium interstitials (Cd) or sulfur vacancies (S) defects existing in CdS thin films) [37]. The near-band edge (NBE) emission from free excitons recombining causes the emission peak for all deposited CdS thin films at around 2.3 eV [25].…”

Section: Pl Studiesmentioning

confidence: 99%

Influence of Deposition Time on Structural, Morphological, and Optical Properties of CdS Thin Films Grown by Low-Cost Chemical Bath Deposition

El-Shaer,

Ezzat,

Habib

et al. 2023

Crystals

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CdS thin films were deposited on glass substrates employing low-cost and low-temperature chemical bath deposition (CBD). The effect of deposition time on the fabricated sample’s properties was investigated by XRD, SEM, EDX, Raman, UV-vis spectrophotometry, and PL spectroscopy. XRD results indicate the formation of cubic and hexagonal structures of CdS thin films. The calculated average crystal size ranged from 21–50 nm. SEM results indicate the formation of hierarchical nanoflakes where the nanoflakes are entangled with one another like plant roots. Raman study confirmed that the fabricated thin films have two distinct peaks that are centered at 298 cm−1 and 599 cm−1, which are characteristic vibration modes for CdS thin film. UV-vis absorption spectra indicate absorption band edges near 500 nm, which are related to the band gap values of CdS thin films. The estimated Eg of CdS thin films was reduced from 2.4 to 2.22 eV as the deposition time increased from 5 to 60 min. PL results show the main peak centered at 537 nm, its intensity decreasing as deposition time increases, indicating lower recombination of charge carriers. Our results reveal that CdS thin films are an excellent candidate for optoelectronic applications.

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“…The type of deposition technique has great influence on the property of the CdS thin films [15]. The deposition time of CdS thin film also has a great effect on the properties of synthesized CdS thin film [16].…”

Section: Introductionmentioning

confidence: 99%

Potential of Hawleyite Cadmium Sulphide (CdS) Nanofilms for PV Cell Applications

Ubieko

Amusan

Osarolube

et al. 2023

JENRR

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The search for suitable materials as buffer layer in the development of photovoltaic cell necessitates the study. The objective is thus, to synthesize and characterize CdS nanofilm for photovoltaic cell application. Thin films of Cadmium Sulphide were deposited on degreased glass substrate, from a bath containing the precursors via Chemical Bath Deposition (CBD) technique. The Physical, Structural, and optical properties were investigated by X-Ray diffractometer, Scanning Electron microscopy (SEM), surface profilometer, Energy dispersive X-ray spectroscopy (EDX) and spectrophotometer. The 9 hours CdS sample showed peak intensities at 30.95o and 51.77o with hkl values of (1 1 1) and (2 2 0). The 12 hours sample showed peak intensities at 30.95o and 51.55o with hkl values of (1 1 1) and (2 2 0). The planes of cubic phase correspond to the mineral Hawleyites for both samples. The average Crystallite grain size for the 9 hours sample is 27.72nm and 38.99nm for the 12 hours samples. The Scanning Electron microscopy analyses illustrate the morphology and the level of uniformity of the CdS coating across the surface of the 9 hours sample and 12 hours samples. The micrographs although slightly similar, the 12 hours sample appeared to be more uniformly coated when compared to the 9 hours sample. Electron-Dispersive X-ray Spectroscopy (EDX) indicated the percentage composition of Cadmium and Sulphide present in the both 9 hours and 12 hours samples, with Cadmium having an average composition of 26.45% and sulphide 8.65% for the 9 hours sample, and 61.95% for Cadmium and 16.43% for Sulphide in the 12 hours CdS sample. The Spectrophotometer was used to investigate the behavior of both samples in the UV (≤ 400nm), Visible and part of the Infrared region. The bandgap energies of both 9 hours and 12 hours sample were 2.36eV and 2.257eV respectively. The average value for the optical conductivity for 9hours sample is 5.099 x 1013 and 7.75 x 1013 for 12 hours sample. The average values of the extinction coefficients, k for 9 hours sample is 1.07 x 109 and 2.02 x 109 for 12 hours sample. The average thickness value of CdS Sample deposited for 9 hours is 14.10 x10-9m while that of the CdS sample deposited for 12 hours is 14.5 x 10-9m. The results affirm the choice of CdS film as buffer layer of the photovoltaic cells.

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Effect of deposition time on chemical bath deposited CdS thin films properties

Cited by 6 publications

References 27 publications

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr₃ Perovskite Solar Cells

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr₃ Perovskite Solar Cells

Influence of Deposition Time on Structural, Morphological, and Optical Properties of CdS Thin Films Grown by Low-Cost Chemical Bath Deposition

Potential of Hawleyite Cadmium Sulphide (CdS) Nanofilms for PV Cell Applications

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Effect of deposition time on chemical bath deposited CdS thin films properties

Cited by 6 publications

References 27 publications

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr3 Perovskite Solar Cells

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr3 Perovskite Solar Cells

Influence of Deposition Time on Structural, Morphological, and Optical Properties of CdS Thin Films Grown by Low-Cost Chemical Bath Deposition

Potential of Hawleyite Cadmium Sulphide (CdS) Nanofilms for PV Cell Applications

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Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr₃ Perovskite Solar Cells

Strengthened Buried Interface via Metal Sulfide Passivation Toward High‐Performance CsPbBr₃ Perovskite Solar Cells