Effect of di‐halogen monomers embraced in main chain of low‐dielectric colorless fluorene‐based poly(aryl ether)s on their performance

Abstract

Di-halogen monomer structures play crucial roles in determining the combined properties of high-performance poly(aryl ether)s for microelectronic applications. In order to disclose such relationship in detail, 9,9-bis(4-hydroxyphenyl) fluorene (BHF) was utilized to polymerize with various di-halogen monomers, bearing phenyl-1,-3,5-triazine, ketone, sulfone, nitrile, diketone moieties. Through solution nucleophilic substitution polymeri-zation, a series of linear poly(fluorenyl aryl ether) (PFEX) was prepared. FTIR, 1 H-NMR were resorted to confirm the polymer structure. PFEXs with high molecular weight exhibited a combination of excellent properties. Poly(fluorenyl aryl ether phenyl-s-triazine) (PFEP) and poly(fluorenyl aryl ether sulfone) (PFES) showed low dielectric constant of 2.59 and 2.43, respectively. Representatively, PFEP with T d5% value as high as 561 C and T g up to 302 C showed high light transmittance (86.94%), and tensile strength up to 91 MPa. Based on free volume calculation by molecular dynamics method, it was found that rigid and bulky structures, such as phenyl-1,3,5-triazine and sulfone groups, were proved to be beneficial for polymer thermal performance along with the dielectric property and light transparence. Robust polar group, for instance nitrile group, contributed more to thermal resistance, however, negatively affected the dielectric property. This work provide commendable suggestions for di-halogen monomer selection for future low-dielectric poly(aryl ether) developments.

Design and synthesis of low‐dieclectric polyaryl ethers containing bulky tetraphenyl vinyl pendant group

“…However, electronic crosstalk and capacitive signal lags, caused by circuit minimization and integration, would result in significant negative impact on device performance. [1][2][3] Technically, besides the fundamental factors, such as interconnect design, the intrinsic properties of line resistance R and system capacitance C, the signal delay would mainly be determined by the latency between R and C (RC delay) for the extremely narrow space within VLSI.…”

“…IR (KBr, v, cm À1 ): 3077 (Ar H stretching), 1484 (C C, Ar stretching). 1 H NMR (600 MHz, DMSO-d 6 ) δ 7.37-7.31 (m, 2H), 7.20-7.10 (m, 9H), 7.02-6.94 (m, 6H), 6.93-6.88 (m, 2H). 13 3.77 (s, 6H).…”

Improving the Dimensional Stability of Polyphenylene Oxide without Reducing Its Dielectric Properties for High-Frequency Communication Applications

“…The contradiction between reducing D k and improving the dimensional stability of polymer materials exists in their different requirements for the molecular structure. Hyperbranched polymers or some large-volume groups, such as fluorenyl, , perfluorocyclobutyl, and trifluoromethyl groups, are preferred to increase free volume for reducing D k . However, these tend to destroy the regularity of the chain, which is detrimental to dimensional stability.…”

A polymer genome approach for rational design of poly(aryl ether)s with high glass transition temperature

“…PAEs are an important genre of copolymers, exhibiting excellent chemical resistance, thermal stability, and mechanical strength, referred to as a class of special engineering thermoplastics. [35][36][37] These prominent properties have stimulated the successful development of substantial PAEs, since their rst discoveries in the 1960s. Thus, PAEs were selected as a proxy for linear random copolymers herein, because of the comparatively plentiful and reliable experimental data resources, which are benecial for data-centric studies.…”