2014
DOI: 10.1364/oe.22.025599
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Effect of dielectric cladding on active plasmonic device based on InGaAsP multiple quantum wells

Abstract: The Surface Plasmon Polariton (SPP) planar waveguide with amorphous silicon (α-Si) cladding is studied, for empowering the device modulation response. The device is fabricated with multiple quantum wells (MQWs) as the gain media electrically pumped for compensating SPP propagation loss on Au film waveguide. The SPP propagation greatly benefits from the modal gain for the long-range hybrid mode, which is optimized by adopting an α-Si cladding layer accompanied with minimal degradation of mode confinement. The p… Show more

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Cited by 5 publications
(6 citation statements)
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“…In Ref. [47], an electrically pumped quantum well emitter has was also placed next to a thin gold layer. The idea was to fully compensate for the metal losses for the long range surface plasmon supported by the gold layer.…”
Section: State-of-the-art Electrically Pumped Metal Nanolasersmentioning
confidence: 99%
“…In Ref. [47], an electrically pumped quantum well emitter has was also placed next to a thin gold layer. The idea was to fully compensate for the metal losses for the long range surface plasmon supported by the gold layer.…”
Section: State-of-the-art Electrically Pumped Metal Nanolasersmentioning
confidence: 99%
“…Both optically [4] and electrically [5] pumped gain media can be used for the active control of SPPs, whereas the latter is especially promising for highdensity optoelectronic integration. In an active SPP device with electrically-pumped multiple quantum wells (MQWs) as the gain medium, the interface-bounded SPP mode requires MQWs in the modal field vicinity so as to maximize the modal gain [6]. Thus, the undoped separate confinement heterostructure (SCH) layer serving for carrier confinement has to be kept thin [7].…”
Section: Introductionmentioning
confidence: 99%
“…For example, on the semi-infinite metal surface, SPP mode cannot exist within the frequency range of [ 1 , 7 ], where ω p is the plasma frequency of metal, ω ∞ is the background permittivity of metal, and ε 1 is the permittivity of semi-infinite dielectric upon the metal. Dielectrics with large permittivity ε 1 , such as Si or GaAs which are well used in some functional SPP devices [ 8 , 9 ], would lead to the decrease of ε sp and the cutoff of SPP mode. In some cases, even though SPP mode is not cutoff, the surrounding with large permittivity would result in extremely large propagation loss at certain optical frequency range.…”
Section: Introductionmentioning
confidence: 99%