Effect of Different Annealing Techniques on CIGS Deposited Using One-Step Single-Target Sputtering

One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

“…Cu 2 Se was found on samples with a CGI = 0.74 deposited at a substrate temperature of 300 °C, then annealed at 450 °C followed by an annealing step in a rapid thermal processing (RTP) tube furnace. [ 65 ]…”

“…Cu 2 Se was found on samples with a CGI = 0.74 deposited at a substrate temperature of 300 °C, then annealed at 450 °C followed by an annealing step in a rapid thermal processing (RTP) tube furnace. [65] Based on the above discussion, Cu-Se phases can be observed either at the surface or at the interface. This might be due to the nonuniform distribution of sputtered elements along the depth direction.…”

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBixIn1−xSe2 for photo response applications

“…The decrease in 'E g ' is caused by the absorption edge's red-shifting and increased absorbance. 53,54 Generally, there are several strategies to reduce E g of CBIS samples, such as microstructure deformation chemical bonding. 50 Primarily, external trivalent or pentavalent cation doping in the selenium lattice modifies the concentration of Se vacancies while also improving their materialistic properties.…”