Effect of Different Factors on the Leakage Current Behavior of Silicon Photovoltaic Modules at High Voltage Stress

Evolution of Corrosive Potential‐Induced Degradation at the Rear Side of Bifacial Passivated Emitter and Rear Solar Cells

“…[ 1 ] During the last years, a number of different PID types have been found, all having the same reason (high voltages versus ground) but showing different degradation effects on solar cell level. Technically, PID is driven by a high potential difference between the module surface and the respective solar cell, leading to leakage currents [ 2–5 ] by ionic conduction (e.g., sodium ions, Na + ). [ 6 ] Sodium plays a major role for so‐called PID‐s, where the “s” stands for “shunting”, as the p−n junction of the affected solar cells is electrically shortened by sodium‐decorated stacking faults, [ 6–9 ] leading to severe efficiency losses up to nearly 80%.…”

Shelf lifetime analysis of organic solar cells combining frequency and time resolved techniques

“…A high leakage current is probably caused by lower contact selectivity within the cell and higher surface energy when aged in the presence of water and oxygen. 37,38 Aer 526 h degradation, all devices show a reduction in the current density in forward and reverse biases due to the loss in diode and resistance properties. The observed R S increment in all degraded devices can be ascribed to several factors such as the creation of deep and shallow traps due to the interaction of oxygen and water with the polymer reducing charge carrier mobility, a loss of injection efficiency from the electrode contact into the active layer due to increasing barrier for charge injection or the creation of an isolation layer between the bulk active layer and contact hindering the charge carrier collection.…”

Review of Potential‐Induced Degradation in Bifacial Photovoltaic Modules

“…Measuring the leakage current is not a direct indicator of PID; it has been shown that there may be no observable difference in the leakage current regime although PID behavior changes. [ 104,105 ] This is due in part to possible PID recovery processes that can occur and compete with degradation (see Section 4.6). Hacke et al have also demonstrated that beyond a certain surface conductivity, the PID rate cannot increase additionally with respect to leakage current when the degradation is limited by diffusion processes (PID‐s rate limited by ion diffusion for instance).…”

“…Then, the leakage current decreases gradually due to a decreased dissolution in the water film of ions contained in the dust. [ 105 ] Soiled surfaces do not follow an Arrhenius relationship of the leakage current with the inverse of the temperature at fixed RH. [ 21 ] This suggests that the Arrhenius relationship described in Equation (4) is valid only for clean surfaces.…”