Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition

Zheng, Tao; He, Wei; Wang, Liyun; Li, Jingbo; Zheng, Shuwen

doi:10.1016/j.jcrysgro.2019.125455

Cited by 18 publications

(8 citation statements)

References 38 publications

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“…According to eqs and , , here D represents the grain size, k = 0.9 is a constant, β and ε represent the (−201) diffraction peak FWHM and microstrain, respectively, and θ and λ still represent the Bragg diffraction angle and X-ray wavelength, respectively. With the increasing TMAl flow rate, the FWHM and microstrain were increasing simultaneously, indicating that our analysis was reasonable.…”

Section: Results and Discussionmentioning

confidence: 99%

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Zhang

Cheng

et al. 2022

Crystal Growth & Design

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β-(Al x Ga1–x )2O3 films were deposited on c-plane sapphire substrates by metal–organic chemical vapor deposition. Triethylgallium (TEGa), trimethylaluminum (TMAl), and O2 were used as Ga, Al, and O sources, respectively. (−201), (−402), and (−603) diffraction peaks of β-(Al x Ga1–x )2O3 films were observed. The X-ray diffraction peaks shifted to larger diffraction angles and were broadened with the increasing TMAl flow rate or the TMAl/(TMAl + TEGa) flow rate ratio, and the optical band gap was effectively improved. The β-(Al x Ga1–x )2O3 films deposited under different temperatures were further investigated. At 600 °C, Al atoms were more easily incorporated into the crystal lattice, and the optical band gap was improved to 5.73 eV. At 800 and 900 °C, the β-(Al x Ga1–x )2O3 films existed as polycrystalline materials.

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Section: Results and Discussionmentioning

confidence: 99%

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Zhang

Cheng

et al. 2022

Crystal Growth & Design

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“…RF magnetron sputtering is a comparatively economical deposition technique that has adequate control over stoichiometry and uniformity of the film compared to the above techniques. Until now, the effects of growth parameters, for instance, substrate temperature, oxygen/argon partial pressures, and sputtering power, on the properties of Ga 2 O 3 have been studied the most [ 17 , 18 , 19 ]. However, hardly any reports about the effect of the O 2 flow rate at fixed Ar flow rate on the structure and optical properties of β-Ga 2 O 3 thin films deposited by the reactive RF magnetron sputter.…”

Section: Introductionmentioning

confidence: 99%

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

Sun

Liu

et al. 2023

Micromachines

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The influence of the O2 flow rate on the properties of gallium oxide (Ga2O3) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga2O3 thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga2O3 samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.

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“…[14] The transmittance of Si and Ta codoped β-Ga 2 O 3 thin films with β-Ga 2 O 3 as the substrate in the range of 300-700 nm is over 73%, and the maximum carrier concentration is 1.12 Â 10 20 cm À3 . [15] Cui et al successfully obtained Ta-doped β-Ga 2 O 3 single crystal with a doping concentration of 0.10 mol% using the optical floating zone growth method. [16] With the increase in temperature, the absorption edge of Ta-doped β-Ga 2 O 3 is obviously redshifted, [17] and the bandgap decreases.…”

Section: Introductionmentioning

confidence: 99%

First‐Principles Study on the Effects of Ta Doping and Point Defects of H_i and V_O on the Photoelectric Properties of β‐Ga₂O₃

Yang,

Wen,

Chen

et al. 2023

Physica Status Solidi (b)

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Herein, the photoelectric properties of Ta‐doped β‐Ga2O3 are studied based on first‐principles density functional theory calculation. The effects of interstitial H and O vacancies on the properties of the system are also considered. The electronic structure, dielectric function, absorption spectrum, mobility, and conductivity of all the systems are studied and analyzed. The results show that Ta‐doped β‐Ga2O3 is an n‐type direct‐bandgap semiconductor. With the increase in Ta doping concentration, the dielectric constant, polarization ability, and charge binding ability of the system gradually increase, the bandgap gradually narrows, and the absorption spectra of systems redshift. The main absorption wavelengths of all systems are in the wavelength range of less than 300 nm. Therefore, Ta‐doped β‐Ga2O3 has an ultraviolet detection ability. The introduction of Ta is beneficial to improve the conductivity of the system. Interstitial H can improve the conductivity of the system.

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Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition

Cited by 18 publications

References 38 publications

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

First‐Principles Study on the Effects of Ta Doping and Point Defects of H_i and V_O on the Photoelectric Properties of β‐Ga₂O₃

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Effect of different substrates on Si and Ta co-doped Ga2O3 films prepared by pulsed laser deposition

Cited by 18 publications

References 38 publications

Heterogrowth of β-(AlxGa1–x)2O3 Thin Films on Sapphire Substrates

Heterogrowth of β-(AlxGa1–x)2O3 Thin Films on Sapphire Substrates

Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

First‐Principles Study on the Effects of Ta Doping and Point Defects of Hi and VO on the Photoelectric Properties of β‐Ga2O3

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Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

Heterogrowth of β-(Al_xGa_1–x)₂O₃ Thin Films on Sapphire Substrates

First‐Principles Study on the Effects of Ta Doping and Point Defects of H_i and V_O on the Photoelectric Properties of β‐Ga₂O₃