Effect of dilution gas on SiCN films growth using methylamine

Wu, Jih‐Jen; Chen, K. H.; Wen, Cheng; Chen, L. C.; Yu, Yang; Wang, C. W.; Lin, E. K.

doi:10.1016/s0254-0584(01)00445-x

Cited by 7 publications

(8 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because we expect H radicals to be produced in a NH 3 plasma as well, it is very likely that the feature at ∼2170 cm –1 , which is observed only in the CH 3 NH 2 plasma process, is due to the incorporation of C-related species in the SiN x film. Some studies on chemical vapor deposition of SiC x N y films have assigned the feature at ∼2170 cm –1 to −CN stretching vibrations. ,, We speculate that in an ALD process, – CN may form on the surface during the CH 3 NH 2 plasma half cycle, but these species would very likely be abstracted as HCN molecules by atomic H produced in the plasma . Nevertheless, we acknowledge that we cannot eliminate the possibility that the feature at 2170 cm –1 in Figure contains minor contributions from the −SiH x ( x = 1, 2, or 3) and −CN stretching vibrations.…”

Section: Resultsmentioning

confidence: 90%

“…The inset in Figure shows the integrated absorbance in the ∼1500 to 1650 cm –1 region, corresponding to the >CN– stretching mode, as a function of the CH 3 NH 2 plasma duration. This region was chosen because it is representative of a hydrogenated CN x film. ,, The linear increase in integrated absorbance confirms that the CH 3 NH 2 plasma at 200 W continuously deposits a hydrogenated CN x film in a nonself-limiting manner, leading to PECVD of CN x . This transition is most likely due to the change in the relative radical composition with plasma power.…”

Section: Resultsmentioning

confidence: 93%

“…CH 3 NH 2 is one of the simplest alkylamine molecules that contains a C and N bond. Furthermore, it has been shown that CH 3 NH 2 plasmas do not lead to CN x film growth under a broad range of conditions . In contrast, a mixture of NH 3 with CH 4 feed gases in a plasma readily leads to CN x growth .…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, it has been shown that CH 3 NH 2 plasmas do not lead to CN x film growth under a broad range of conditions. 24 In contrast, a mixture of NH 3 with CH 4 feed gases in a plasma readily leads to CN x growth. 25 Similar to an NH 3 plasma, we expect that the presence of atomic H, NH, and NH 2 radicals in CH 3 NH 2 plasmas will produce surface −NH x (x = 1 or 2) species, 24,26 which would then be the reactive surface sites for Si 2 Cl 6 chemisorption.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Atomic Layer Deposition of SiC_xN_y Using Si₂Cl₆ and CH₃NH₂ Plasma

et al. 2017

View full text Add to dashboard Cite

We developed a novel process for the atomic layer deposition (ALD) of SiC x N y films using a Si 2 Cl 6 and a CH 3 NH 2 plasma. Under self-limiting growth conditions, this ALD process led to SiC x N y films with up to 9 atomic percent carbon with a conformality >95% in 5:1 aspect ratio nanostructures. The surface reactions during ALD, and in particular the carbon incorporation mechanism, were studied using in situ attenuated total reflection Fourier transform infrared spectroscopy. Similar to the Si 2 Cl 6 and NH 3 plasmabased process, we show that on the SiC x N y growth surface, Si 2 Cl 6 reacts primarily with surface −NH 2 species that were created after the CH 3 NH 2 plasma cycle. During the subsequent CH 3 NH 2 half cycle, the surface chlorine was liberated, creating −NH x (x = 1 or 2) groups, while carbon was incorporated primarily as −NCN− species. In situ ellipsometry showed that the growth per cycle and the refractive index were ∼1 Å and ∼1.85, respectively. Elemental depth profiling with secondary ion mass spectrometry showed that, as the plasma power was increased from 50 to 100 W, the carbon atomic fraction increased from ∼4 to ∼9%. At higher plasma powers, the CH 3 NH 2 plasma half cycle was not self-limiting and led to continuous carbon nitride growth.

show abstract

Section: Resultsmentioning

confidence: 90%

Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomic Layer Deposition of SiC_xN_y Using Si₂Cl₆ and CH₃NH₂ Plasma

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Generally, H 2 and Ar are used as the dilution gases in a CVD system. Many researchers have studied the effect of H 2 and Ar dilution gas on the deposition of various kinds of materials by the CVD method [7][8][9][10]. Jonas et al reported that the deposition rate of SiC increased when H 2 was added to a mixture of CH 3 SiCl 3 + Ar, which they attributed to the fact that H 2 acts as a reactant [7].…”

Section: Introductionmentioning

confidence: 99%