Effect of Dip Time on Electrodeposited Zinc Oxide Nanofilm

Abstract

Nanofilms of Zinc Oxide (ZnO) were fabricated from solutions of zinc tetraoxosulphate heptahydrate, citric acid, and sodium hydroxide onto a Fluorine Tin Oxide (FTO) conductive glass by elecrodeposition process. Time as bath parameter was varied. Three samples with time interval of 30 seconds, 60 seconds and 90 seconds were fabricated. Absorbance of the films was determined with the help of spectrophotometer. Other optical properties of the nanofilms were calculated using the appropriate equations from the literature. The deposited nanofilms have high absorbance in UV region and low absorbance in VIS -NIR region. Transmittance of the nanofilms is low in UV region and high in VIS -NIR region. Reflectance of the films is low throughout the UV -VIS -NIR regions. The optimal optical thickness of 270 nm was obtained at 90 seconds. The bandgap of the nanofilms obtained is between 3.30 to 3.60 eV. Average crystallite size of 43.04 nm was obtained for the deposited ZnO thin film.

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

“…This confirmed the prospect offered in energy bandgap engineering of cobalt doped zinc selenide by altering deposition time. Similar effects on bandgap due to changes in deposition time using electrodeposition techniques have been reported by [44,[47][48][49][50].…”

“…Transmittance values of the deposited thin films fall between 24.40% and 73.15%. Similar effects on the absorbance of thin film as deposition time increases have been obtained by [44,48]. Figure 6 shows the graph of reflectance against wavelength for cobalt doped zinc selenide thin films deposited at different values of deposition time.…”

An investigation of photovoltaic devices based onp‐typeCu2Oandn‐typeγ‐WO3junction through an electrolyte solution containing a redox pair

“…In addition, film thickness, morphology, and optical and electronic properties can be controlled by various deposition parameters, such as current density, applied potential, deposition time, and electrolytic bath concentration. 51‐53 …”

“…42 In addition, film thickness, morphology, and optical and electronic properties can be controlled by various deposition parameters, such as current density, applied potential, deposition time, and electrolytic bath concentration. [51][52][53] Photovoltaic devices with p-type Cu 2 O films have been prepared with n-type ZnO in a heterojunction configuration. However, for Cu 2 O devices configured with pn junction, γ-WO 3 (tungsten trioxide) seems to be an adequate material since it presents optical band gap energy (E BG ) ranging from 2.6 to 2.8 eV, which allows the harvesting of visible light, 54 while ZnO absorbs in UV light.…”