Effect of dislocations on minority carrier diffusion length in practical silicon solar cells

Kieliba, T.; Riepe, Stephan; Warta, Wilhelm

doi:10.1063/1.2338126

Cited by 31 publications

(8 citation statements)

References 21 publications

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“…Typical examples include the quantum efficiency loss in GaN-based light-emitting diodes (LEDs) 1,2 and GaAs solar cells 3 . The relationship between dislocation and carrier dynamic has been well experimentally investigated and understood in conventional semiconductors such as GaN 4 and Si 5 . Recently, halide perovskite has been showing great promises 6,7 in many semiconductor devices such as photovoltaics 8–10 , LEDs 11,12 , lasers 13–15 , photodetectors 16,17 and transistors 18,19 .…”

Section: Introductionmentioning

confidence: 99%

Carrier lifetime enhancement in halide perovskite via remote epitaxy

et al. 2019

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Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the ‘defects-tolerant’ halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics.

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Section: Introductionmentioning

confidence: 99%

Carrier lifetime enhancement in halide perovskite via remote epitaxy

et al. 2019

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“…20 For that reason, we have developed an approximate solution, which involves two steps: ͑i͒ calculation of a bulk diffusion length L eff,b for the case of a dislocated semi-infinite specimen and ͑ii͒ treating the dislocated Si as homogeneous material with bulk diffusion length L eff,b , which is "cut off" at a length W 1 by applying the appropriate boundary condition for the back surface. Device modeling as a semi-infinite specimen is therefore not applicable.…”

Section: Thin Devices With Finite Srvmentioning

confidence: 99%

Effect of dislocations on open circuit voltage in crystalline silicon solar cells

Kieliba

Riepe

Warta

2006

Journal of Applied Physics

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The dislocation dependence of open circuit voltage is studied based on Donolato's model for the effect of dislocations on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. Experimental data measured on thin-film solar cells show a strong decrease of open circuit voltage V-oc with an increase in defect density. The analysis of the recombination currents indicates that V-oc is largely reduced by space charge region recombination. For a quantitative study on the relationship between dislocation density, effective diffusion length, and V-oc the data are fitted with an extended version of Donolato's model. Taking into account the base recombination current as well as the space charge region recombination current, the modeled curves fit very well to the experimental data. However, satisfactory fitting results require that the region of high recombination is set wider than the "effective depletion region width," which is calculated from the electrical field strength in a planar p-n junction. This effect can be explained with the assumption of a geometrical enlargement of the p-n junction due to defects like dislocations

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“…The minority carrier diffusion length, L, is one of the most important parameters directly affecting this conversion efficiency and is detrimentally decreased by carrier recombination at defects such as dislocations and grain boundaries (GBs). [4][5][6][7][8] For example, the photocurrent density increases as L increases in the case of crystalline Si; thus, higher g values can be expected to lead to larger L values. 9 Grain boundaries in poly-crystalline Si have been investigated using electron beam-induced current and Kelvin probe force microscopy techniques to determine if they act as recombination centers.…”

Section: Introductionmentioning

confidence: 99%

First-principles study of twin grain boundaries in epitaxial BaSi2 on Si(111)

Baba

Kohyama

Suemasu

2016

Journal of Applied Physics

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Epitaxial films of BaSi2 on Si(111) for solar cell applications possess three epitaxial variants and exhibit a minority carrier diffusion length (ca. 9.4 μm) much larger than the domain size (ca. 0.2 μm); thus, the domain boundaries (DBs) between the variants do not act as carrier recombination centers. In this work, transmission electron microscopy (TEM) was used to observe the atomic arrangements around the DBs in BaSi2 epitaxial films on Si(111), and the most stable atomic configuration was determined by first-principles calculations based on density functional theory to provide possible interface models. Bright-field TEM along the a-axis of BaSi2 revealed that each DB was a twin boundary between two different epitaxial variants, and that Ba(II) atoms form hexagons containing central Ba(I) atoms in both the bulk and DB regions. Four possible interface models containing Ba(I)-atom interface layers were constructed, each consistent with TEM observations and distinguished by the relationship between the Si tetrahedron arrays in the two domains adjacent across the interface. This study assessed the structural relaxation of initial interface models constructed from surface slabs terminated by Ba(I) atoms or from zigzag surface slabs terminated by Si tetrahedra and Ba(II) atoms. In these models, the interactions or relative positions between Si tetrahedra appear to dominate the relaxation behavior and DB energies. One of the four interface models whose relationship between first-neighboring Si tetrahedra across the interface was the same as that in the bulk was particularly stable, with a DB energy of 95 mJ/m2. There were no significant differences in the partial densities of states and band gaps between the bulk and DB regions, and it was therefore concluded that such DBs do not affect the minority carrier properties of BaSi2.

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Effect of dislocations on minority carrier diffusion length in practical silicon solar cells

Cited by 31 publications

References 21 publications

Carrier lifetime enhancement in halide perovskite via remote epitaxy

Carrier lifetime enhancement in halide perovskite via remote epitaxy

Effect of dislocations on open circuit voltage in crystalline silicon solar cells

First-principles study of twin grain boundaries in epitaxial BaSi2 on Si(111)

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