Effect of Doped AlGaN Width Variation on Analog Performance of Dual Gate Underlap MOS-HEMT

A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures

“…The AlN spacer between the AlGaN and GaN layer is known to increase the ns, but its physical root cause is not clearly identified [1,2]. In addition, the effect of n-doped AlGaN on the ns is investigated [3][4][5][6].…”