Effect of doping and heat treatment on the photoluminescence of CdS films deposited by spray pyrolysis

Ahmad‐Bitar, Riyad N.

doi:10.1016/s0960-1481(99)00067-1

Cited by 38 publications

(23 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The broad defect-related band located around 1.5-2.0 eV is ascribed to the emission between the energy levels of the defects, such as, Cd vacancy (V Cd ), surface states, Cl at the lattice of S (Cl S ), S vacancy (V S ), interstitial Cd (Cdi) and the the valence band state (VB), impurities and acceptor. [24][25][26] The detailed peak components, which are ascribed to the specific emissions, are shown in Fig. 4(b).…”

Section: Resultsmentioning

confidence: 99%

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

View full text Add to dashboard Cite

Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

show abstract

Section: Resultsmentioning

confidence: 99%

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

View full text Add to dashboard Cite

show abstract

“…The yellow band emission observed at 2.04 eV is caused by a donor-acceptor pair [26]. Ahmad-Bitar [27] reported a similar band for CdS thin films which they attributed to recombination via surface localized states, a transition from cadmium interstitial (I Cd ) to valence band, and the transition from interstitial cadmium-cadmium vacancy complex I + Cd −V − Cd which acts as a donor to an acceptor level. …”

Section: Pl Studiesmentioning

confidence: 94%

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Gnanamuthu¹,

Punithavathy²,

Jeyakumar³

et al. 2018

Acta Phys. Pol. A

View full text Add to dashboard Cite

This paper reports the synthesis, crystal structure, surface morphology, optical and electrical properties of Mgdoped Sn2S3 thin films deposited by spray pyrolysis technique. All the films exhibit orthorhombic crystal structure with a (211) preferential orientation. Crystallite size calculations based on the Debye-Scherrer formula indicated that the Sn2S3 crystallite size increases with Mg content from 27.97 nm to 33.58 nm. Scanning electron microscopy images showed that all the films were very smooth composed of nanoneedle and nanoplate shaped grains. The band gap energy of the films exhibits a blue shift from 1.94 eV to 2.09 eV with increase in Mg concentration. Resistivity values of the undoped and Mg-doped Sn2S3 films were found to be in the order of 0.1 Ωcm. From the obtained results it is observed that the Sn2S3 film coated with 2 wt% Mg concentration exhibits better physical properties.

show abstract

“…The yellow emission in the CdS could be attributed due to the transition of Cd-interstitial donors to the valance band [4]. In addition, according to a study about heat treatment, it was understood that, yellow emission could be due to the recombination via surface localized states, a transition from I cd to the valance band, and the transition from the interstitial Cd-Cd vacancy complex that as a donor to an accepter level [16]. Furthermore, the yellow emission of the Zn-doped CdS has a tail in the red region around 700 nm (red band).…”

Section: -Experimentalmentioning

confidence: 99%

Photocurrent application of Zn-doped CdS nanostructures grown by thermal evaporation method

Baghchesara

Yousefi

Cheraghizade

et al. 2016

Ceramics International

View full text Add to dashboard Cite

Effect of doping and heat treatment on the photoluminescence of CdS films deposited by spray pyrolysis

Cited by 38 publications

References 22 publications

Cu-doped CdS and its application in CdTe thin film solar cell

Cu-doped CdS and its application in CdTe thin film solar cell

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications

Photocurrent application of Zn-doped CdS nanostructures grown by thermal evaporation method

Contact Info

Product

Resources

About

Effect of doping and heat treatment on the photoluminescence of CdS films deposited by spray pyrolysis

Cited by 38 publications

References 22 publications

Cu-doped CdS and its application in CdTe thin film solar cell

Cu-doped CdS and its application in CdTe thin film solar cell

Investigations on the Properties of Nanostructured Mg-Doped Sn2S3 Thin Films towards Photovoltaic Applications

Photocurrent application of Zn-doped CdS nanostructures grown by thermal evaporation method

Contact Info

Product

Resources

About

Investigations on the Properties of Nanostructured Mg-Doped Sn₂S₃ Thin Films towards Photovoltaic Applications