2020
DOI: 10.1016/j.mssp.2019.104901
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Effect of doping Mg on the structure and optical properties of LiNbO3 films prepared by radio-frequency magnetron sputtering

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Cited by 5 publications
(3 citation statements)
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“…In 2001, Lansiaux et al [39] were able to grow thick c-axis monocrystalline LN films on Al 2 O 3 substrates using a multi-step sputtering process from a LN target with added excess lithium of 10-20%, showing optical losses as low as 1.2 dB/cm [38]. Today, the sputtering of LN continues in research regarding doping [12], integrating and forming heterojunctions with silicon [40], tuning band gap [14], etc.…”
Section: Sputteringmentioning
confidence: 99%
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“…In 2001, Lansiaux et al [39] were able to grow thick c-axis monocrystalline LN films on Al 2 O 3 substrates using a multi-step sputtering process from a LN target with added excess lithium of 10-20%, showing optical losses as low as 1.2 dB/cm [38]. Today, the sputtering of LN continues in research regarding doping [12], integrating and forming heterojunctions with silicon [40], tuning band gap [14], etc.…”
Section: Sputteringmentioning
confidence: 99%
“…Promising work on direct etching of LN to fabricate compact optical devices with optical propagation losses as low as 0.027 dB/cm has been shown in a 250 nm thin LN slab, achieved by a dry etch process to pattern a 600 nm smart-cut film [10,11]. Thus, high-quality epitaxial thin film LN is desirable for smaller devices with lower power consumption; lower optical losses; tighter wave confinement; integrated devices; and engineered material advances, such as doping [12,13] or strain manipulation [14], analogous to compound semiconductor electronics technology.…”
Section: Introductionmentioning
confidence: 99%
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