Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

Elsherif, Osama S.; Vernon–Parry, K.D.; Evans–Freeman, J.H.; May, Paul

doi:10.1088/0268-1242/27/6/065019

Cited by 10 publications

(7 citation statements)

References 51 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Deep trap with the similar activation energy as identified in these measurements has been observed before in unintentionally doped HPHT type IIa and Ib diamond [33], in B-doped polycrystalline CVD diamonds [34], as well as in neutron irradiated scCVD diamond [35]. The origin of the defect has not been determined decisively.…”

Section: Charge Transient Spectroscopy (Qts)supporting

confidence: 63%

Charge transport in single crystal CVD diamond studied at high temperatures

Crnjac

Rodriguez-Ramos

Skukan

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

The capability of single crystal diamonds to maintain their unique electronic properties even at high temperatures is, in particular, relevant for its applications as a radiation detector. In order to explore characteristics of charge transport at high temperatures (up to 450 • C), diamond was exposed to MeV energy ions, both, to induce radiation damage and to probe subsequent influence on detector's properties. Dependence of mobility-lifetime product with temperature has been obtained for electrons and holes.For holes, mu-tau displays a linear degradation with rising temperature, while for electrons, change with temperature is less evident. Furthermore, deep trapping levels induced in the material by radiation damage, were studied through time-resolved charge signals. Detrapping time was extracted from this data. Hole trap level, with the activation energy of 0.53 ± 0.01 eV has been detected in the regions of the diamond detector previously irradiated by 5 MeV damaging proton beam, but not in the pristine regions. This indicates that the trap was formed due to defect induction during radiation damage exposure. Activation of this deep level is important for charge transport performance in diamond detectors operating at high temperatures and high radiation conditions.

show abstract

Section: Charge Transient Spectroscopy (Qts)supporting

confidence: 63%

Charge transport in single crystal CVD diamond studied at high temperatures

Crnjac

Rodriguez-Ramos

Skukan

et al. 2021

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…However, in the case of an extended defect, the amplitude of the DLTS peak is proportional to the filling pulse width, as shown in the following equation 34 35 36 :…”

Section: Resultsmentioning

confidence: 99%

Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

Heo

Chung

Lee

et al. 2016

Sci Rep

View full text Add to dashboard Cite

Defect depth profiles of Cu (In1−x,Gax)(Se1−ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (VOC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the VOC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.

show abstract

“…Figure S5a,b shows, respectively, the whole Raman spectra of the pristine BDD electrode and the U-BDD electrode after the chronoamperometry in 5 mM uranyl acetate and 0.1 M KClO 4 . Figure S5a reveals the characteristic Raman peaks for diamond at 1330 cm –1 (Fig mode). , …”

Section: Resultsmentioning

confidence: 99%

Stable Uranium Oxide Under Atmospheric Conditions: An Electroplating Technique for U Film Fabrication at Boron-Doped Diamond Electrodes

Peña-Duarte,

Acevedo-González,

Lagle

et al. 2023

ACS Mater. Au

View full text Add to dashboard Cite

An electrodeposition technique of low-enriched uranium onto boron-doped diamond (BDD) electrodes for uranium electro-assembling, sequestration, uranium electrowinning (as the electroextraction alternative), and future neutron detection applications has been developed. Our findings through physicochemical characterization and an in-depth XPS analysis show that the U/BDD system consists of a blend of uranium oxides with IV, V, and VI oxidation states. Results show that U5+ is present and stable under open atmospheric conditions. The U electrodeposition on BDD creates smooth surfaces, free of voids, with uniform deposition of homogeneous tiny particles of stable uranium oxides, instead of chunky particles, and uranium compound mixtures, like large fibers of the precursor uranyl. Our electrochemical method operates without high temperatures or hazardous compounds. Uranium corrosion and oxidation processes occur spontaneously and parallel to the electrochemical formation of metallic uranium on BDD electrode surfaces, with metallic uranium reacting with water, producing fine particles of UO2. This work represents the first attempt to create a surface of uranium oxides, where the film thickness can be controlled for future applications, e.g., improving sensitivity in neutron detection technologies. Our U electro-assembling method provides a sustainable strategy for uranium electro-recovery from nuclear wastes, immobilizing uranium as a storage method or as U-film fabrication (U/BDD) for future neutron detection applications. Besides, this work contributes to uranium-based technologies, improving them and providing a better understanding of their electrochemical properties, e.g., uranium redox processes, uranium oxides’ formation, and stability evaluation. These properties are of remarkable need for uranium-based target formation. The use of our U/BDD method is proposed as an environmental protocol to recover and immobilize uranium-235, and other fissile materials, from civil and defense wastes, contaminated systems, and stockpiles.

show abstract

Effect of doping on electronic states in B-doped polycrystalline CVD diamond films

Cited by 10 publications

References 51 publications

Charge transport in single crystal CVD diamond studied at high temperatures

Charge transport in single crystal CVD diamond studied at high temperatures

Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

Stable Uranium Oxide Under Atmospheric Conditions: An Electroplating Technique for U Film Fabrication at Boron-Doped Diamond Electrodes

Contact Info

Product

Resources

About