Effect of doping on positron lifetime in Si crystals

Sen, P.; Sen, C.

doi:10.1088/0022-3719/7/16/010

Cited by 14 publications

(3 citation statements)

References 9 publications

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“…There is no significant difference in the values of n-and p-type crystals, whereas the lifetime in undoped material is s n i d e r by about 8 to 10%. This result is in accordance with measurements of Sen and Sen [9]. The value of z, , = (218 8) ps then can he identified as the lifetime in defecbfree silicon.…”

Section: Resultssupporting

confidence: 91%

Annihilation of Positrons in Electron‐Irradiated Silicon Crystals

Fuhs

Holzhauer

Mantl

et al. 1978

Physica Status Solidi (b)

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In honour of Prof. Dr. J. STUKE'S Goth birthday Lifetime and Doppler-broadening measurements in positron annihilation are used to investigate defects in silicon crystals irradiated with electrons of 1 MeV energy. The lifetime in undoped defect-free Si is found to be (218 8) ps. Isochronal annealing studies in the temperature range 12 K < T, < 600 K show that in undoped Si a t low temperature positrons annihilate a t neutral monovacancies and double vacancies with lifetimes of (268 & 10) and (318 & 15) ps, respectively.In boron-doped crystals before and after irradiation no special defect reveals in the spectra up to 400 K.

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Section: Resultssupporting

confidence: 91%

Annihilation of Positrons in Electron‐Irradiated Silicon Crystals

Fuhs

Holzhauer

Mantl

et al. 1978

Physica Status Solidi (b)

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“…It is illustrative to note that the same tendency towards shorter lifetimes also took place for silicon (and many metals) as one 'learns' the material. Some of the first reported bulk lifetimes in Si were around 240 ps (Sen and Sen 1974) but is now at 218 ps (Dannefaer et a1 1986). It is not difficult to understand this type of development since low levels of defect concentrations or incorrect source corrections tend to increase the apparent bulk lifetime.…”

Section: Bulk Lifetime and Shallow Trapsmentioning

confidence: 99%

On the character of defects in GaAs

Dannefaer¹,

Mascher

Kerr

1989

J. Phys.: Condens. Matter

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Positron lifetime measurements on GaAs are presented and discussed and former measurements are reviewed. The limitations and appropriate criteria for adequate spectrum analyses are considered in detail. It is shown that exceptionally good statistical accuracy is necessary for a reliable and consequential decomposition, and that source corrections are very important. Results for liquid phase electro-epitaxially grown GaAs conclusively show that the bulk lifetime for GaAs is 220+or-1 ps. All other GaAs samples (grown by either the liquid encapsulated Czochralski method or by the horizontal Bridgman method) show variable bulk lifetimes up to 232 ps. Shallow traps are concluded to be the cause for this. The binding energy of positrons in such traps is estimated to be about 23 meV, and the trapping rate into deep traps from such shallow traps is found to be approximately five times smaller than from the bulk state. The shallow trap is likely to be substitutional boron or nitrogen. The shallow traps anneal mainly around 700 K. Deep traps are found in all samples, yielding lifetimes tau DI approximately=260 ps and 290 ps

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“…The first problem we must address is the question of the value for the bulk lifetime in silicon. Sen and Sen [5] found values between 223 and 245 ps where the high value (245 ps) occurred for both Band P-doped samples. Dorikens et al [6], however, found a bulk lifetime of 230 ps independent on doping types (P, Sb, B) and concentrations.…”

Section: Basic Parametersmentioning

confidence: 91%

Defects and Oxygen in Silicon Studied by Positrons

Dannefaer

1987

Phys. Stat. Sol. (a)

104

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During the last few years wide interest is generated in applying the positron annihilation techniques to defects in semiconductors. Since defects in semiconductors are, in many regards, dissimilar to defects in metals one must expect that new responses from positrons will emerge not normally associated with metals. One such important effect would be the charged state of a defect in a semiconductor. At the present time silicon is the semiconductor which has been investigated mostly, but the important 111-V GaAs compound semiconductor is currently also under intensive investigations. For the case of silicon a detailed review will be presented encompassing lifetime results for vacancy agglomerates, high-temperature equilibrium measurements (undoped and P-doped) and oxygen in silicon. Furthermore, indications for the temperature variation of the bulk lifetime and its possible variation with doping levels will also be discussed. Wahrend der vergangenen Jahre konnte einiges Interesse an der Anwendung der Positronen-annihiIationstechnik auf Defekte in Halbleitern geweckt werden. Da Defekte in Halbleitern in vielerlei Hinsicht unterschiedlich zu Defekten in Metallen sind, mu13 man erwarten, da13 man neue ,,Antworten" von Positronen erhalt, die man mit Metallen nicht verbinden wurde. Einer jener wichtigen Effekte ist der Ladungszustand eines Defektes in einem Halbleiter. Zur Zeit ist Silizium der am hiiufigsten untersuchte Halbleiter, doch wird auch am wichtigen III-V-Verbindungshalbleiter GaAs intensiv Porschnng betrieben. Es wird ein detaillierter Uberblick gegeben hinsichtlich des Silizium; er umfaBt Lebensdauerresultate fur Leerstellenagglomerate, Hochtemperaturmessungen im thermischen Gleichgewicht (fur undotiertes und P-dotiertes Si) und Sauerstoff in Silizium. Weiter werden Hinweise auf eine Abhangigkeit der Lebensdauer im defektfreien Kristall von der Temperatur und moglicherweise vom Dotierungsgehalt diskutiert. 31 physica (a) 102/2

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Effect of doping on positron lifetime in Si crystals

Cited by 14 publications

References 9 publications

Annihilation of Positrons in Electron‐Irradiated Silicon Crystals

Annihilation of Positrons in Electron‐Irradiated Silicon Crystals

On the character of defects in GaAs

Defects and Oxygen in Silicon Studied by Positrons

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