“…The structural, physical and electrical properties of ZnO films were governed by deposition parameters [14], posttreatment [7,17,18] and doping material [6,15,12,[19][20][21][22] such as Al, Ga, Sc, Y, Mn, Cu, Ag, etc. In addition, it is known that the metals of group I (Ag and Cu) are fast-diffusing impurities in the semiconductor compound [14].…”