2013
DOI: 10.1016/j.jallcom.2012.12.038
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Effect of doping on trapping center parameters in nanocrystalline CdSe thin films

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Cited by 17 publications
(4 citation statements)
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“…5 According to previous research, as the doping quantity increases, so does the density of copper-induced shallow defect states. 42 This phenomenon is consistent with observations in current PL studies, where increasing the amount of copper doping results in additional quenching of the PL intensity due to the enhanced charge-transfer from CB to the higher density defect states. This escalation adds to an increased transfer of charge carriers from the band edge to newly emerging defect states.…”
supporting
confidence: 91%
“…5 According to previous research, as the doping quantity increases, so does the density of copper-induced shallow defect states. 42 This phenomenon is consistent with observations in current PL studies, where increasing the amount of copper doping results in additional quenching of the PL intensity due to the enhanced charge-transfer from CB to the higher density defect states. This escalation adds to an increased transfer of charge carriers from the band edge to newly emerging defect states.…”
supporting
confidence: 91%
“…For light trapping in thin film [20][21][22][23][24][25][26] solar cells, an alternative method is to take advantage of the strong local field enhancement around the noble metallic nanoparticles. Noble metallic nanoparticles store incident photon energy in a localized surface plasmon mode [11].…”
Section: Light Concentration Using Particle Plasmons/near-field Enhan...mentioning
confidence: 99%
“…With a band gap of 1.74 eV it is considered as a promising material for device applications such as solar cell window absorber layer, photo detectors, gas sensors, field effect transistors [1]. Properties of thin films depends on growth techniques and preparation conditions.…”
Section: Introductionmentioning
confidence: 99%