IEEE Trans. Device Mater. Relib.
 2023
DOI: 10.1109/tdmr.2023.3268163
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Effect of Dummy Gate Bias on Breakdown Voltage and Gate Charge of a Novel In0.53Ga0.47As/InP Trench-Gate Pentode Power Device

Jagamohan Sahoo
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Rajat Mahapatra
2
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