Effect of Edge Roughness on Resistance and Switching Voltage of Magnetic Tunnel Junctions

Pandey, Rachit R.; Dutta, Sutapa; A., Mendonca, Heston; Tulapurkar, Ashwin

doi:10.1109/led.2023.3254811

IEEE Electron Device Lett.

2023

DOI: 10.1109/led.2023.3254811

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Effect of Edge Roughness on Resistance and Switching Voltage of Magnetic Tunnel Junctions

Rachit R. Pandey

Sutapa Dutta

Mendonca, Heston A.

et al.

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2024

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Cited by 3 publications

References 15 publications

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Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

Sujatha,

Pahuja,

Deb

2024

Physica Status Solidi (b)

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Herein, analytical modeling of Fe3O4/x(≈1.1 nm)/Co (x = rubrene, C60, and bathocuproine (BCP)) magnetic tunnel junctions (MTJs) has been performed using rubrene, C60, and BCP as organic spacer layers. The simulation is considered as nonequilibrium Green's function assuming spin precession at ferromagnet/organic semiconductor (FM/OSC) interface defect states. The voltage‐dependent resistances for both parallel (RP) and antiparallel (RAP) orientations have been observed to be dependent on spin injection from FM/OSC defect states. Pinning well‐dependent defect state depths have been associated with band misalignment‐induced lattice distortion at FM/OSC interface of the devices. The large tunnel magnetoresistance (TMR) response for rubrene‐based MTJ device has been attributed to a higher change of FM/OSC defect state depths with voltage. High TMR may have reduced spin torque‐dependent spin precession, leading to lower spin transfer torque for the rubrene device. Hence, engineering of defect states at the FM/OSC interface may lead to the successful realization of enhanced TMR in organic spacer MTJs for high‐performance spintronic memory applications.

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Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

Sujatha,

Pahuja,

Deb

2024

Physica Status Solidi (b)

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Interface defect state induced spin injection in organic magnetic tunnel junctions

Soujanya,

Deb

2024

Journal of Applied Physics

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This article analytically explores defect assisted spin injection in organic magnetic tunnel junctions (MTJs) [x/rubrene/Co, x = La2O3, LaMnO3, La0.7Ca0.3MnO3 (LCMO), La0.7Sr0.3MnO3 (LSMO)] employing nonequilibrium Green’s function (NEGF). Spin precession at ferromagnet (FM)/organic semiconductor (OSC) interface defect states have been considered while modeling the MTJ devices. Variations in voltage dependent parallel (RP) and antiparallel (RAP) resistances have been attributed to modified spin dependent scattering at modified spin resolved density of states of magnetic electrodes. Moreover, change in distribution of defect state depths at a spin injection interface has also been observed to modify RP/RAP, and hence, tunnel magnetoresistance (TMR) across the devices. Localization of defect state distribution due to a high spin split band may have resulted in large TMR for La2O3 devices. Nonlinear spin transfer torque (STT) in devices other than LSMO indicates compensation of spin damping, resulting in a high TMR response across the devices. Hence, the localization of defect state distribution and the choice of magnetic electrodes with high spin split bands may be exercised to realize spintronic devices for low power spin memory applications.

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Optimization of Bifurcated Switching by Enhanced Synthetic Antiferromagnetic Layer

Sun,

Meng,

Gong

et al. 2024

Electronics

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Defects in the free layer are considered to be the main cause of the balloon effect, but there is little insight into the synthetic antiferromagnetic (SAF) layer. To address this shortcoming, in this work, an optimized SAF layer was introduced in the perpendicular magnetic tunneling junction (pMTJ) stack to eliminate the low-probability bifurcated-switching phenomenon. The results indicated that the Hf field in the film stack improved significantly from ~5700 Oe to ~7500 Oe. A magnetoresistive random access memory (MRAM) test chip was also fabricated with a 300 mm process, resulting in a significantly improved ballooning effect. The results also indicated that the switching voltage decreased by 18.6% and the writing energy decreased by 33.7%. In addition, the low-probability stray field along the x-axis was thought to be the main cause of the ballooning effect, and was experimentally optimized for the first time by enhancing the SAF layer. This work provides a new perspective on spin-flipping dynamics, facilitating a deeper comprehension of the internal mechanism and helping to secure improvements in MRAM performance.

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Effect of Edge Roughness on Resistance and Switching Voltage of Magnetic Tunnel Junctions

Cited by 3 publications

References 15 publications

Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

Effect of Ferromagnet/Organic Semiconductor Interface Defect States on Tunnel Magnetoresistance of Hybrid Magnetic Tunnel Junctions

Interface defect state induced spin injection in organic magnetic tunnel junctions

Optimization of Bifurcated Switching by Enhanced Synthetic Antiferromagnetic Layer

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