Effect of electric field and Sn grain orientation on Cu consumption in Sn/Cu solder joint

Chen, Jieshi; Xu, Mengjia; Jin, Yujing; Wang, Kaiyun; Yu, Chun; Lü, Hao

doi:10.1016/j.commatsci.2014.07.019

Cited by 5 publications

(4 citation statements)

References 32 publications

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“…Q decreases with an increase in electric field intensity. The conclusion is consistent with the conclusion obtained by Cheng [16] through first principles calculations. With the decrease in Q, atoms are more likely to leave their original positions, accelerating the migration rate of various crystal defects.…”

Section: Effect Of Electric Field On the Activation Energy Of The Cu ...supporting

confidence: 93%

“…Cheng et al [16] calculated the diffusion energy barrier of Cu atoms in Sn crystals under different electric field intensities based on first principles. It illustrated that as the It has been experimentally proven that an electric field affects the diffusion behavior of the atoms around the interface of solder joints [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

“…Cheng et al [16] calculated the diffusion energy barrier of Cu atoms in Sn crystals under different electric field intensities based on first principles. It illustrated that as the electric field intensity increased, the energy barrier for Cu atom diffusion decreased, thus facilitating the migration of Cu atoms toward Sn atoms.…”

Section: Introductionmentioning

confidence: 99%

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Molecular Dynamics Simulation of the Cu3Sn/Cu Interfacial Diffusion Mechanism under Electrothermal Coupling

He,

Lan,

et al. 2023

Materials

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With the increasing power density of electronic devices, solder joints are prone to electromigration under high currents, which results in a significant threat to reliability. In this study, the molecular dynamics method is used to study the diffusion mechanism of the Cu3Sn/Cu interface under the action of electrothermal coupling. The results show that the diffusion activation energy decreases with an increase in electric field intensity, accelerating the diffusion of the Cu3Sn/Cu interface. Furthermore, it is noted that the abrupt change in the vacancy–time curve lags behind that of the mean square displacement curve, which depicts that the responses of the vacancies are driven by the electric field. The vacancy-responsive diffusion mechanism of the Cu3Sn/Cu interface is proposed. The atoms around the interface in the electric field get rid of the shackles of the neighboring atoms easily. The vacancy concentration increases as the atoms leave the equilibrium position, which accelerates the movement of vacancies and enhances the diffusion of the Cu3Sn/Cu interface.

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Section: Effect Of Electric Field On the Activation Energy Of The Cu ...supporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

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Molecular Dynamics Simulation of the Cu3Sn/Cu Interfacial Diffusion Mechanism under Electrothermal Coupling

He,

Lan,

et al. 2023

Materials

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“…The factors affecting electromigration have been studied and it is believed that current density, temperature, and solder joint composition had a significant influence on electromigration [3][4][5]. In addition, the microstructure of the solder joint also has a significant effect on the electromigration which has attracted many researchers' attention [6][7][8][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Effect of Grain Structure and Ni/Au-UBM Layer on Electromigration-Induced Failure Mechanism in Sn-3.0Ag-0.5Cu Solder Joints

Zhang

Wang

et al. 2022

Micromachines

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The development of advanced electronic devices leads to highly miniaturized interconnect circuits (ICs), which significantly increases the electromigration (EM) phenomenon of solder and circuits due to higher current density. The electromigration of solder joints under high current density has become a severe reliability concern in terms of microelectronic product reliability. The microstructure of the solder plays an important role in the electromigration induced degradation. In this study, Sn-3.0Ag-0.5Cu solder bumps with Ni/Au under bump metallization (UBM) layer were fabricated and electromigration acceleration tests were conducted under current density of 1.4 × 104 A/cm2 and 120 °C to investigate the effect of grain structure and Ni/Au-UBM layer on EM-induced failure. Grain structures of solder bumps were determined by utilizing the Electron Backscatter Diffraction (EBSD) technique, and single-crystal solder, single-crystal dominated solder, and polycrystalline solder are observed in different test samples. According to the Scanning Electron Microscope (SEM) images, it is observed that the Ni/Au-UBM layer of the Cu pad can inhibit atom diffusion between solder bump and Cu pad, which reduces the consumption of Cu pad but causes a large void and crack at the interface. The EM lifetime of single crystal solder bumps is lower than that of polycrystalline solder bumps when the c-axis of single crystal solder bumps is perpendicular to the electron flow direction. Additionally, the single crystal structure will increase the brittleness of the solder bump, and cracks are easily generated and expanded under the stress caused by the mismatch of thermal expansion coefficients between the solder bump and Ni/Au-UBM layer near Cu pad. Polycrystalline solder bumps with a higher misorientation angle (15–55°) have a higher atom diffusion rate, which will result in the acceleration of the EM-induced failure.

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The micro-mechanism for the effect of Sn grain orientation on substrate consumption in Sn solder joints

Chen

et al. 2015

Computational Materials Science

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Effect of electric field and Sn grain orientation on Cu consumption in Sn/Cu solder joint

Cited by 5 publications

References 32 publications

Molecular Dynamics Simulation of the Cu3Sn/Cu Interfacial Diffusion Mechanism under Electrothermal Coupling

Molecular Dynamics Simulation of the Cu3Sn/Cu Interfacial Diffusion Mechanism under Electrothermal Coupling

Effect of Grain Structure and Ni/Au-UBM Layer on Electromigration-Induced Failure Mechanism in Sn-3.0Ag-0.5Cu Solder Joints

The micro-mechanism for the effect of Sn grain orientation on substrate consumption in Sn solder joints

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