Effect of electric field on primary dark pulses in SPADs for advanced radiation detection applications

Lim, Kyung Taek; Kim, Hyoungtaek; Kim, Jinhwan; Cho, Gyuseong

doi:10.1016/j.net.2020.07.006

Cited by 5 publications

(4 citation statements)

References 34 publications

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“…The presence of traps, whose number depends on the implantation process, increases the probability of thermal generation [10]. Thus, the reduction of ion implantationinduced defects by additional annealing is essential for achieving low DCR [65].…”

Section: Noise Sourcesmentioning

confidence: 99%

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Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

et al. 2022

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The ability to detect single photons is becoming an enabling key capability in an increasing number of fields. Indeed, its scope is not limited to applications that specifically rely on single photons, such as quantum imaging, but extends to applications where a low signal is overwhelmed by background light, such as laser ranging, or in which faint excitation light is required not to damage the sample or harm the patient. In the last decades, SPADs gained popularity with respect to other single-photon detectors thanks to their small size, possibility to be integrated in Complementary Metal-Oxide Semiconductor processes, room temperature operability, low power supply and, above all, the possibility to be fast gated (to time filter the incoming signal) and to precisely timestamp the detected photons. The development of large digital arrays that integrates the detectors and circuits has allowed the implementation of complex functionality on-chip, tailoring the detectors to suit the need of specific applications. This review proposes a complete overview of silicon SPADs characteristics and applications. In this Part I, starting with the working principle, simulation models and required frontend, the paper moves to the most common parameters adopted in literature for characterizing SPADs, and describes single pixels applications and their performance. In the next Part II, the focus is then posed on the development of SPAD arrays, presenting some of the most notable examples found in literature. The actual exploitation of these designs in real applications (e.g., automotive, bioimaging and radiation detectors) is then discussed.

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Section: Noise Sourcesmentioning

confidence: 99%

“…Afterpulsing can be characterized through Time-Correlated Carrier Counting measurements [65,69]: a histogram of interarrival times between two consecutive avalanche pulses is collected. The device must be kept in the dark or under constant illumination so that the event rate is low enough not to limit the maximum inter-arrival time.…”

Section: Noise Sourcesmentioning

confidence: 99%

Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

et al. 2022

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“…The SPAD has characteristics such as dark count rate (DCR), afterpulsing probability (AP), photon detection efficiency (PDE), and single-photon timing resolution (SPTR). These are mainly determined by the SPAD junction and electric field design [2], [3] and are optimized for specific applications (temperature, wavelength, etc. ).…”

Section: Introductionmentioning

confidence: 99%

Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes

Parent,

Vachon,

Gauthier

et al. 2024

IEEE J. Electron Devices Soc.

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When developing a technology based on singlephoton avalanche diodes (SPADs), the SPAD characterization is mandatory to debug, optimize and monitor the microfabrication process. This is especially true for the development of SPAD arrays 3D integrated with CMOS readout electronics, where SPAD testing is required to qualify the process, independently from the final CMOS readout circuit. This work reports on a characterization and monitoring platform dedicated to SPAD testing at die and wafer level, in the context of a 3D SPAD technology development. The platform relies on a dedicated integrated circuit made in a standard CMOS technology and used in different configurations from a prototype printed circuit board (die-level testing) to active probe cards (wafer-level mapping). The platform gives full access to SPAD characteristics in Geiger mode such as the dark noise, photon detection efficiency and timing resolution. The integrated circuit and its configuration are described in detail as well as results obtained on different SPAD test structures. In particular, the dark count rate mapping demonstrates the benefits of testing SPADs at wafer level at the R&D stage.

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“…Here, the SPAD circuit model served to verify the functionality of the circuit [ 79 ]. The effect of the electric field on primary dark pulses in SPADs for advanced radiation detection applications was investigated in the study by Lim et al [ 80 ]. The arrays of SPADs include many positive features, such as compactness, high detection efficiency, low operating voltage, magnetic field resistance, rapid time response, and can therefore replace conventional photomultiplier tubes (PMTs) in many radiation detection applications [ 80 ].…”

Section: Introductionmentioning

confidence: 99%

Magnetic Carbon Nanofiber Mats for Prospective Single Photon Avalanche Diode (SPAD) Sensing Applications

Trabelsi

Mamun

Klöcker

et al. 2021

Sensors

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Electrospinning enables simple and cost-effective production of magnetic nanofibers by adding nanoparticles to a polymer solution. In order to increase the electrical conductivity of such nanofibers, the carbonization process is crucial. In this study, the chemical and morphological properties of magnetic nanofiber mats prepared from polyacrylonitrile (PAN)/magnetite were investigated. In our previous studies, PAN/magnetite nanofiber mats were carbonized at 500 °C, 600 °C, and 800 °C. Here, PAN/magnetite nanofiber mats were carbonized at 1000 °C. The surface morphology of these PAN/magnetite nanofiber mats is not significantly different from nanofiber mats thermally treated at 800 °C and have remained relatively flexible at 1000 °C, which can be advantageous for various application fields. The addition of nanoparticles increased the average fiber diameter compared to pure PAN nanofiber mats and improved the dimensional stability during thermal processes. The high conductivity, the high magnetization properties, as well as shielding against electromagnetic interference of such carbonized nanofibers can be proposed for use in single photon avalanche diode (SPAD), where these properties are advantageous.

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Effect of electric field on primary dark pulses in SPADs for advanced radiation detection applications

Cited by 5 publications

References 34 publications

Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

Historical Perspectives, State of art and Research Trends of Single Photon Avalanche Diodes and Their Applications (Part 1: Single Pixels)

Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes

Magnetic Carbon Nanofiber Mats for Prospective Single Photon Avalanche Diode (SPAD) Sensing Applications

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