Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device

Qi, Yanyuan; Shen, Zongjie; Zhao, Chun; Zhao, Ce Zhou

doi:10.1016/j.jallcom.2019.153603

Cited by 34 publications

(26 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…( d ) PVA, reproduced from [ 71 ], with permission from John Wiley and Sons, 2011. ( e ) AlO x , reproduced from [ 19 ], with permission from Elsevier, 2020. ( f ) CsPbBr 3 , reproduced from [ 73 ], with permission from John Wiley and Sons, 2019.…”

Section: Figurementioning

confidence: 99%

“…Currently, 2D thin film materials such as graphene and graphene oxide (GO) are also attracting increasing attention as candidates of electrode because of the excellent mobility of carriers and high thermal/electrical conductivity [ 15 , 16 , 17 ]. Compared with electrode thin film materials, more researchers focus on thin film materials applicated on RS medium, and inorganic materials are the main investigation objectives, including oxides and solid electrolyte, which will be discussed in Chapter 3 [ 11 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

Self Cite

View full text Add to dashboard Cite

Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

show abstract

Section: Figurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…It constitutes a substantial portion of the oxide precursor solutions: around 98% and 90% for lower and higher concentrations, respectively. The most common solvents in solution‐based metal oxide RRAMs are 2‐methoxyethanol (2‐ME), [ 63,72,79,80,98,102,104,105,107,109,112,113,115–119,121,127,129,130,133,134,137,139,142,144,150–153,158,159,168–185 ] ethanol, [ 72,77,78,82,103,108,113,114,120,126,132,135,136,138,145,147,157,162–164,168,186–200 ] deionized (DI) water, [ 73,101,116,120,123,148,162,163,190,201 ] acetic acid, [ 103,121,129–131,134,140,142,144,149,150,152,154,173,179,180,183,202 ] and isopropanol [ 23,123,125,128,136,169,181,203 ] among others (ethylene glycol, [ 141,204 ] 2‐butoxyethanol, [ 205 ] acetylacetone, [ 149 ] and acetonitrile […”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

“…2019 [101] AlO 2020 [323] TiO x Spin/drop RT Cu/Pt Bipolar 3.9 4.5 × 10 1 6 × 10 1 2020 [108] AlO and then incorporated in p ++ -Si/HfO 2 /Cu resistive switching devices. [123] These exhibited an electroforming-free and bipolar resistive switching behavior and also a low variability, large resistance window (10 4 ), and suitable endurance end retention characteristics for radiation sensing.…”

Section: Influence Of the Electrodes/metal Oxide Interfacementioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

View full text Add to dashboard Cite

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

show abstract

“…The importance of obtaining the t parameter is that it lets us know how much disordered oxide occurs when the aluminum oxide grows as a function of the aluminum-surface corrosion, which will result in the aluminum atoms being visualized as layers of hexagonal close-packed oxygen atoms with small aluminum atoms in two-thirds of the octahedral coordinated holes between the oxygen atoms [13], such that oxide behaves like to a defective oxide [14][15][16].…”

Section: Synthesis Process For Aluminum Oxidementioning

confidence: 99%

Synthesis of an Aluminum Oxide-Based Functional Device Engineered by Corrosion/Oxidation Process

Baca-Arroyo

2020

Crystals

View full text Add to dashboard Cite

A disordered aluminum oxide grown on recycled aluminum sheets was synthesized by a corrosion/oxidation process. First, aluminum sheets recovered from unusable beverage cans were mechanically polished and dried in air atmosphere. Second, corrosion and oxidation into the aqueous solutions were the synthesis stages to produce aluminum oxide. Phase formation and electrical conduction of aluminum-oxide layers were validated by X-ray diffraction analysis and current–voltage plots at room temperature. An aluminum oxide-based structure operating under unusual principles at an extended lifetime resulted when an aluminum-oxide layer was inserted between two aluminum electrodes. This was attributed to an unusual electrical conduction. Some suggested models from the circuit theoretic properties are discussed here for potential usefulness for the aluminum oxide synthesized, as an environmental-friendly material that can be further useful into a sustainable scenario.

show abstract

Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device

Cited by 34 publications

References 47 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

Synthesis of an Aluminum Oxide-Based Functional Device Engineered by Corrosion/Oxidation Process

Contact Info

Product

Resources

About