Effect of electron irradiation fluence on the output parameters of GaAs solar cell

Mazouz, Halima; Logerais, Pierre‐Olivier; Belghachi, Abderrahmane; Riou, O.; Delaleux, Fabien; Durastanti, Jean-Félix

doi:10.1016/j.ijhydene.2015.05.127

Cited by 21 publications

(7 citation statements)

References 13 publications

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“…The recombination centers formed in GaAs solar cells under irradiation have been studied in depth and the implications of the junction position with lifetime degradation have been discussed . It is generally understood that irradiation reduces the minority carriers' diffusion length, and therefore the average distance that these carriers have to travel before reaching the p − n junction directly affect the cells resilience to the space environment.…”

Section: Introductionmentioning

confidence: 99%

Electron radiation–induced degradation of GaAs solar cells with different architectures

Gruginskie

Cappelluti

Bauhuis

et al. 2020

Progress in Photovoltaics

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The effects of electron irradiation on the performance of GaAs solar cells with a range of architectures is studied. Solar cells with shallow and deep junction designs processed on the native wafer as well as into a thin‐film were irradiated by 1‐MeV electrons with fluence up to 1×1015 e−/cm2. The degradation of the cell performance due to irradiation was studied experimentally and theoretically using model simulations, and a coherent set of minority carriers' lifetime damage constants was derived. The solar cell performance degradation primarily depends on the junction depth and the thickness of the active layers, whereas the material damage shows to be insensitive to the cell architecture and fabrication steps. The modeling study has pointed out that besides the reduction of carriers lifetime, the electron irradiation strongly affects the quality of hetero‐interfaces, an effect scarcely addressed in the literature. It is demonstrated that linear increase with the electron fluence of the surface recombination velocity at the front and rear hetero‐interfaces of the solar cell accurately describes the degradation of the spectral response and of the dark current characteristic upon irradiation. A shallow junction solar cell processed into a thin‐film device has the lowest sensitivity to electron radiation, showing an efficiency at the end of life equivalent to 82% of the beginning‐of‐life efficiency.

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Section: Introductionmentioning

confidence: 99%

Electron radiation–induced degradation of GaAs solar cells with different architectures

Gruginskie

Cappelluti

Bauhuis

et al. 2020

Progress in Photovoltaics

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“…Mazouz et al used numerical simulation to model the performance degradation of a single-junction GaAs solar cell under 1 MeV electron irradiation, and they found that the GaAs solar cell is sensitive to 10 16 cm −2 electron irradiation fluence. The electron defects E3, E4 and the hole defect H4 created by electron irradiation are the most responsible for the degradation of short-circuit current [19].…”

Section: Introductionmentioning

confidence: 99%

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

et al. 2020

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GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristics of Si-doped GaAs under different gamma irradiation doses (0, 0.1, 1 and 10 KGy) are investigated. Surface morphology studies show roughen of the surface with irradiation. Appearance of transverse-optical (TO) phonon mode and blueshift of TO peak reflect the presence of internal strain with irradiation. The average strain has been measured to be 0.009 by Raman spectroscopy, indicating that the irradiated zone still has a good crystallinity even at a dose of 10 KGy. Photoluminescence intensity is increased by about 60% under 10 KGy gamma irradiation due to the strain suppression of nonradiative recombination centers. Furthermore, the current of Si-doped GaAs is reduced at 3V bias with the increasing gamma dose. This study demonstrates that the Si-doped GaAs has good radiation resistance under gamma irradiation, and appropriate level of gamma irradiation can be used to enhance the luminescence property of Si-doped GaAs.

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“…The latter deep level defect has no significant influence on the initial J(V) characteristic. This phenomenon can equally be observed in a GaAs based solar cell irradiated by electrons of 1 MeV [20].…”

Section: Resultsmentioning

confidence: 64%

Effect of solar cell structure on the radiation resistance of an InP solar cell

Mazouz

Belghachi

Logerais³

2020

E3S Web Conf.

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Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.

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Effect of electron irradiation fluence on the output parameters of GaAs solar cell

Cited by 21 publications

References 13 publications

Electron radiation–induced degradation of GaAs solar cells with different architectures

Electron radiation–induced degradation of GaAs solar cells with different architectures

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

Effect of solar cell structure on the radiation resistance of an InP solar cell

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