Effect of electron irradiation on crystallization of vacuum-deposited amorphous antimony films

Hashimoto, Mituru; Tabel, Atsushi; Tajima, Seiji; Kato, Makoto

doi:10.1016/0040-6090(84)90026-9

Cited by 8 publications

(5 citation statements)

References 2 publications

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“…Some results seem to indicate that the presence of oxygen induces a significant modification of the Sb deposit. For instance, in the case of Sb deposits covered with a metallic layer, the amorphous Sb deposit transferred in oxygen and covered with silver does not react in the same way as the amorphous Sb deposit unexposed in oxygen: the growth morphology of the metallic over-deposit is strongly modified by oxygen pre-exposure of the Sb deposit (Hashimoto 1986).…”

Section: Discussionmentioning

confidence: 99%

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Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

Fuchs

Treilleux

Aires

et al. 1991

Philosophical Magazine B

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Section: Discussionmentioning

confidence: 99%

“…The effect of electron beam irradiation before and during antimony evaporation was previously studied in the range of low incident electron energy (700eV) (Hashimoto et al 1988, Hashimoto, Tabei, Tajima andKato 1984). In the case of antimony molecular beam deposition on carbon films, Hashimoto et a[.…”

Section: Discussionmentioning

confidence: 99%

Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

Fuchs

Treilleux

Aires

et al. 1991

Philosophical Magazine B

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“…The effect of electron irradiation during deposition on the crystallinity of thin films has been examined in other materials (23)(24)(25). Such irradiation can either inhibit or promote the existence of crystallites in thin films.…”

Section: A-ge Films Prepared With Electron Irradiation Above 473 Kmentioning

confidence: 99%

The effects of electron bombardment on vacuum-deposited amorphous germanium films

Johnson¹,

Brodie²

1991

Can. J. Phys.

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Low-energy electron irradiation was used to inhibit crystallite nucleation in a range of substrate temperatures (473-5 13 K) where crystallite formation would normally be observed. The properties of the amorphous phase obtained closely match the published results for high-temperature annealed (up to 723 K) amorphous germanium films in the precrystallization regime rather than those for amorphous germanium films obtained by annealing them to 513 K. It is shown that the properties of annealed amorphous germanium films are independent of a range of deposition conditions when pure (water free) films are deposited.On a utilisC I'irradiation par des Clectrons de faible energie pour inhiber la nucleation des cristallites, dans un intervalle de temperature du substrat (473-513 K) oh la formation de cristallites devrait normalement &tre observke. Les propriCtCs de la phase amorphe obtenue s'accordent Ctroitement avec les resultats publies pour les films de germanium amorphe recuits i haute tempkrature (jusqu'i 723 K) dans le regime de prCcristallisation plut6t qu'avec ceux des films amorphes recuits jusqu'i 5 13 K. On montre que les propriktes des films de Ge amorphe recuits sont independantes, dans une large gamme, des conditions de dCpBt. lorsque des films purs (sans eau) sont deposes.[Traduit par la redaction]Can. J . Phys. 69, 621 (1991)

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“…Ранее процессы конденсации и кристаллизации тонких пленок сурьмы изучались рядом авторов. Так, было исследовано влияние следующих параметров на скорость и критическую толщину кристаллизации: типа подложки [1,2], ее температуры [1][2][3], скорости осаждения [2,4], взаимного расположения подложки и источника вещества [5], электронного облучения подложки [2,6]. Исследовался также рост сферолитных кристаллов в пленках [7,8].…”

Section: Introductionunclassified

Электронная Микроскопия Микроструктуры Тонких Пленок Сурьмы Переменной Толщины

Колосов¹,

Юшков²,

Веретенников³

et al. 2022

Журнал Технической Физики

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Thin Sb films with a thickness gradient deposited in vacuum were investigated by transmission electron microscopy. Microstructures in films with increasing thickness change from amorphous islands of increasing density and size to labyrinthine and continuous films with texturing, which also changes with increasing thickness. Based on the analysis of the patterns of bend extinction contours, a strong internal bending of the crystal lattice, up to 120 deg/μm, and the dependence of the crystallographic orientations in the structures of the film on the thickness were revealed.

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Effect of electron irradiation on crystallization of vacuum-deposited amorphous antimony films

Cited by 8 publications

References 2 publications

Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

Electron irradiation effects in amorphous antimony thin films obtained by cluster-beam deposition

The effects of electron bombardment on vacuum-deposited amorphous germanium films

Электронная Микроскопия Микроструктуры Тонких Пленок Сурьмы Переменной Толщины

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