The theoretical description of electronic tunneling transport through the three-well nanostructure (In0.53Ga0.47As/In0.52Al0.48As), being an expanded active region of quantum cascade detector, is presented. Using the solution of the Schrödinger equation, the dynamic conductivity caused by quantum transitions due to the interaction of electrons with electromagnetic eld and phonons is calculated. Within the Green functions approach, the electron spectrum, renormalized due to the interaction with conned optical and interface phonons is obtained at cryogenic and room temperatures. The role of dierent mechanisms of electronphonon interaction in the formation of temperature shifts, decay rates of electron states and electromagnetic eld absorption bands is investigated. It is shown that independently of the temperature, the contribution produced by interface phonons into renormalized electron spectrum is several times bigger than that of conned phonons. However, the experimentally observed long-wave shift and broadening of absorption band at higher temperatures is, mainly, caused by the decreasing heights of resonant tunneling structure potential barriers.