Effect of Erbium Incorporation on SiN
 x
 O
 y
 /c-Si Interface in Silicon-Based Optoelectronic Devices

Yang, Lei; Fan, Yuxuan; Lv, Xiang; Pang, Houwei; Yuan, Shuai; Yu, Xuegong; Li, Dongsheng; Yang, Deren

doi:10.1109/ted.2023.3316147

Cited by 5 publications

(1 citation statement)

References 43 publications

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“…The rare earth ion would bring about a high concentration of positive fixed charges and electron traps in the SiO x interface, severely scattering electrons [30]. The doped F atom as an efficient donor dopant can passivate the interfacial electron capture centers [31], dramatically optimizing the electrical injection which contributes to maintaining the energy of hot electrons, raising the EL intensity in the FTO:Er film. On the other hand, it has been reported that F atoms replace O atoms, generating the Er-O-F structures [4], where Er atoms are located in the O-F octahedral framework of the SnO 2 lattice [32].…”

Section: Resultsmentioning

confidence: 99%

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Wu,

Pang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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1.54 μm telecom-wavelength electroluminescence is achieved by erbium-doped SnO2 film devices fabricated on silicon wafers. Employing fluorine as a co-dopant, the electroluminescence intensity is increased due to enhanced electrical injection of the device and improved optical activity of the erbium ions. The realization of electroluminescence can be ascribed to the inelastic impact with erbium ions through the hot electrons originating from different electrical conduction mechanisms, by controlling the SiOx interlayer thickness. Herein, the device based on the co-doped film presents a low turn-on voltage of 4.4 V. Via further regulating the annealing condition, the co-doped device obtains a maximum optical power density of 92.2 μW/cm2 at 1.55 μm, with an operating lifetime of more than 190 h in the atmosphere. This work clarifies the broad application prospects for SnO2 devices in silicon photonics technology.

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Section: Resultsmentioning

confidence: 99%

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Wu,

Pang,

Wang

et al. 2024

J. Phys. D: Appl. Phys.

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Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells

Yang,

Ou,

et al. 2024

Energy & Environ Materials

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Nowadays, a stack of heavily doped polysilicon (poly‐Si) and tunnel oxide (SiOx) is widely employed to improve the passivation performance in n‐type tunnel oxide passivated contact (TOPCon) silicon solar cells. In this case, it is critical to develop an in‐line advanced fabrication process capable of producing high‐quality tunnel SiOx. Herein, an in‐line ozone‐gas oxidation (OGO) process to prepare the tunnel SiOx is proposed to be applied in n‐type TOPCon solar cell fabrication, which has obtained better performance compared with previously reported in‐line plasma‐assisted N2O oxidation (PANO) process. In order to explore the underlying mechanism, the electrical properties of the OGO and PANO tunnel SiOx are analyzed by deep‐level transient spectroscopy technology. Notably, continuous interface states in the band gap are detected for OGO tunnel SiOx, with the interface state densities (Dit) of 1.2 × 1012–3.6 × 1012 cm−2 eV−1 distributed in Ev + (0.15–0.40) eV, which is significantly lower than PANO tunnel SiOx. Furthermore, X‐ray photoelectron spectroscopy analysis indicate that the percentage of SiO2 (Si4+) in OGO tunnel SiOx is higher than which in PANO tunnel SiOx. Therefore, we ascribe the lower Dit to the good inhibitory effects on the formation of low‐valent silicon oxides during the OGO process. In a nutshell, OGO tunnel SiOx has a great potential to be applied in n‐type TOPCon silicon solar cell, which may be available for global photovoltaics industry.

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Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

Öztel,

Akçay,

Algün

2024

J Mater Sci: Mater Electron

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This study reports the investigation of the effect of cerium (Ce) dopant concentration on defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient spectroscopy (DLTS). Undoped ZnO (uZnO) and Ce-doped ZnO (Ce:ZnO) were synthesized at different molar ratios using the sol–gel method, and n-Ce:ZnO/p-Si heterojunctions were fabricated on p-Si via spin coating. According to energy dispersive x-ray spectroscopy (EDS) data, no foreign atoms are present in the synthesized nanoparticles. A critical observation is that the oxygen content increases with Ce doping. Scanning electron microscopy (SEM) images revealed uniform spherical grains, with a decrease in grain size as Ce dopant concentration increased. X-ray diffraction (XRD) confirmed a hexagonal wurtzite crystal structure for all nanostructures. I–V measurements documented that the structures have a good rectifying behavior and that the structure exhibiting the best diode character is the Ce:ZnO/p-Si heterostructure containing 2 mol% Ce with an ideality factor of 3.36. DLTS revealed that Ce doping deepened defect levels below the conduction band edge (Ec), with trap level positions calculated as Ec − 0.079, Ec − 0.311, Ec − 0.290, and Ec − 0.386 eV for undoped, 1, 2, and 5 mol% Ce-doped ZnO/p-Si, respectively. The trap concentration decreases with the addition of Ce into the ZnO lattice. The study underlines the tunability of the electrical properties of ZnO/p-Si HJs through Ce doping and the optimizability of their efficiency.

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Effect of Erbium Incorporation on SiN_xO_y/c-Si Interface in Silicon-Based Optoelectronic Devices

Cited by 5 publications

References 43 publications

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells

Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

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Effect of Erbium Incorporation on SiN x O y /c-Si Interface in Silicon-Based Optoelectronic Devices

Cited by 5 publications

References 43 publications

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO2 film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO2 film devices

Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells

Deep-level transient spectroscopy analysis of interface defects in Ce:ZnO/p-Si heterostructures

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Effect of Erbium Incorporation on SiN_xO_y/c-Si Interface in Silicon-Based Optoelectronic Devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices

Realization of 1.54 μm electroluminescence via silicon-based erbium-doped SnO₂ film devices