2009
DOI: 10.1016/j.tsf.2009.01.104
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Effect of etching on dielectric constant and surface composition of SiCOH low-k films in inductively coupled fluorocarbon plasmas

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Cited by 12 publications
(3 citation statements)
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“…Most papers on this topic report on the etching of dense and porous SiCOH (i.e. a common low-k dielectric material used in semiconductors) with CF 4 -based plasmas [14][15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Most papers on this topic report on the etching of dense and porous SiCOH (i.e. a common low-k dielectric material used in semiconductors) with CF 4 -based plasmas [14][15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…During the etching process, CF polymerization 6,7 at the side walls and carbon depletion occurs. 8 After the etching process, the resulting CF film must be removed. Both the plasma etching and the removal of the CF film with classical cleaners, i.e., dHF, lead to the formation of OH groups and the ULK surface gets more hydrophilic.…”
Section: ' Introductionmentioning
confidence: 99%
“…The plasma etching leads to damage of the ULK material. During the etching process, CF polymerization , at the side walls and carbon depletion occurs . After the etching process, the resulting CF film must be removed.…”
Section: Introductionmentioning
confidence: 99%