Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon

Kopáni, Martin; Mikula, Milan; Kosnáč, Daniel; Kováč, J.; Trnka, Michal; Gregus, Jan; Jerigová, Monika; Jergel, M.; Vavrinský, Erik; Bacová, Silvia; Zitto, Peter; Polák, Štefan; Pinčík, Emil

doi:10.1016/j.apsusc.2020.147463

Cited by 11 publications

(6 citation statements)

References 49 publications

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“…One can deduce that the dissolution of SiO 2 in the electrolyte solution is less pronounced in the absence of surfactant which is consistent with the discussion above. In accordance with the deconvolution of Si peaks, core level O 1s (532.8 eV) on all three spectra (not shown here) also confirm the presence of silicon oxide species [23,27]. Although these anodized surfaces slightly differ in term of SiO 2 and H y SiO x portions, the existence of these completely and partially oxidised species affirms the involvement of anodic oxidation reaction in PSi formation.…”

Section: Chemical Composition Of Anodized Psi Layerssupporting

confidence: 87%

“…The newer peaks appearing at 101 eV hint the presence of intermediate state of oxide (SiO x ). In addition to the presence of high valance silicon dioxide (SiO 2 ), anodized PSi layers may also contain low valance silicon mono-oxide (Si-O) as well as H y SiO x and SiF x H y complexes [23,27]. In our case, since fluorine is not detected, the presence of SiF x H y complexes is ruled out.…”

Section: Chemical Composition Of Anodized Psi Layersmentioning

confidence: 80%

“…The deconvoluted Si 2p peak (figure 8) indicates the presence of native oxide SiO 2 at 103.3 eV and Si 0 at 99.8 eV on the pristine substrate [22]. The anodization process converts Si 0 to oxidised species, and therefore, SiO 2 peaks are more intense on the anodized samples [23][24][25][26][27], and consequently, the intensities of their Si 0 peaks reduce. The newer peaks appearing at 101 eV hint the presence of intermediate state of oxide (SiO x ).…”

Section: Chemical Composition Of Anodized Psi Layersmentioning

confidence: 99%

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Effect of surfactant and etching time on p-type porous silicon formation through potentiostatic anodization

Zeb¹,

Le²

2022

Adv. Nat. Sci: Nanosci. Nanotechnol.

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Electrochemical anodization provides the scalability required for structuring porous silicon (PSi) layers for mass production; hence, new and feasible processes are highly sought-after. We investigate the effect of surfactant (additive) and etching time on the morphology of PSi matrix in a simplistic two-electrode anodization cell using aqueous HF electrolyte. Instead of the conventional galvanostatic mode (constant current density), we use the rarely reported technique of potentiostatic anodization (constant applied potential) for engineering PSi surface morphology. We demonstrate that under a constant applied potential, channel-like morphology, pyramids or well-ordered macropores are easily achieved through either increasing the processing time or adding a small amount of surfactant into the electrolyte. Our results provide better understanding of the mechanism underlying the formation of PSi and propose a practical solution for obtaining application-specific macrostructure of PSi.

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Section: Chemical Composition Of Anodized Psi Layerssupporting

confidence: 87%

Section: Chemical Composition Of Anodized Psi Layersmentioning

confidence: 80%

Section: Chemical Composition Of Anodized Psi Layersmentioning

confidence: 99%

See 1 more Smart Citation

Effect of surfactant and etching time on p-type porous silicon formation through potentiostatic anodization

Zeb¹,

Le²

2022

Adv. Nat. Sci: Nanosci. Nanotechnol.

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“…Specifically, since the band gap of a-Si is much larger than that of crystalline Si, more energy should be required to drive electron migration in the a-Si layer, which can interfere the redox reaction on scratched areas, thereby changing the topography of prepared metallic structures. Notably, the a-Si layer can be selectively dissolved by HF solution Figure a showed Raman spectra collected from a scratch before and after being etched by HF solution for 60 min.…”

Section: Resultsmentioning

confidence: 99%

“…Notably, the a-Si layer can be selectively dissolved by HF solution. 42 Figure 2a showed Raman spectra collected from a scratch before and after being etched by HF solution for 60 min. For untreated scratches, besides Raman characteristic peak for pristine Si−I (520 cm −1 ), other peaks (150 cm −1 , 300 cm −1 , and 470 cm −1 ) can also be noticed, while only one peak at 520 cm −1 appeared on HF-etched scratches, demonstrating that the a-Si layer was completely removed from the scratched area, which was confirmed by TEM characterization (Figure S5b).…”

Section: Orientational Deposition Mechanism Figure S5mentioning

confidence: 99%

Site-Controlled Preparation of Au Micro/Nanostructures Toward Enhancing Raman Scattering

Cui,

Liu,

Chen

et al. 2024

ACS Appl. Nano Mater.

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As a sensing method with single molecule-level resolution in theory, surface-enhanced Raman scattering (SERS) shows robust applications in wide fields. However, due to technical limitations, it remains challenging to obtain effective plasmonic architectures with both strong and uniform electric field hot spots. Herein, nanoscratch-induced orientational metal deposition was proposed for achieving the customizable preparation of Au plasmonic architectures on silicon (Si) for high-performance SERS detections. We found that the deposition can be significantly affected by mechanical crystal defects on Si surfaces. Based on Raman analysis and conductive atomic force microscope detections, the defects were demonstrated to change the conductivity on scratched areas. Compared with untreated scratches, conductive sites on amorphous Si-free scratches were significantly increased and distributed uniformly. Further analysis indicated that the increase in the conductivity can accelerate the redox reaction on the scratches, which facilitated the formation of compact Au structures, as confirmed by in situ scanning electron microscope characterizations. The as-prepared SERS substrates exhibited excellent detection sensitivity and reproducibility, and the anti-interference ability was demonstrated by detecting malachite green residues from different water environments. We also found that Au concentric rings with uniformly rough surfaces obtained by the proposed site-controlled deposition can focus polarization-independent electric field enhancement induced by surface defects on the whole structure surface. These findings can shed light on flexible preparation of highquality SERS substrates.

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Application of hydrophobic coating to reduce leakage current through surface energy control of high voltage insulator

Kim

2022

Applied Surface Science

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Effect of etching time in hydrofluoric acid on the structure and morphology of n-type porous silicon

Cited by 11 publications

References 49 publications

Effect of surfactant and etching time on p-type porous silicon formation through potentiostatic anodization

Effect of surfactant and etching time on p-type porous silicon formation through potentiostatic anodization

Site-Controlled Preparation of Au Micro/Nanostructures Toward Enhancing Raman Scattering

Application of hydrophobic coating to reduce leakage current through surface energy control of high voltage insulator

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