2012
DOI: 10.1155/2012/581743
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Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Abstract: The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm 2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured thro… Show more

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Cited by 11 publications
(4 citation statements)
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“…Similar result was reported by K. Behzad et al [16]. The observed average pore diameter, porosity and uniformity were higher than the reported values [17,18] avoid the formation of hydrogen bubbles during the etching process. These bubbles cover the surface and prevent electrolyte from reaching the surface that in turn results in inhomogeneities in the porous thin film [19].…”
Section: Resultssupporting
confidence: 88%
“…Similar result was reported by K. Behzad et al [16]. The observed average pore diameter, porosity and uniformity were higher than the reported values [17,18] avoid the formation of hydrogen bubbles during the etching process. These bubbles cover the surface and prevent electrolyte from reaching the surface that in turn results in inhomogeneities in the porous thin film [19].…”
Section: Resultssupporting
confidence: 88%
“…As etching time increases [9,11], and due to prosity increase [5,6,12] blue shift in PL .Specific surface area decreases with increasing porosity [3,4] as as concluded in many studies.…”
Section: Resultsmentioning
confidence: 84%
“…In this study, we report the change in porosity due to the etching time which causes shift in PL peak wavelengths [9][10][11][12]. We used the AFM 3-D measurements in order to calculate porosity and specific surface area that can be easily applied and also a non destructive method to derive the relationship.…”
Section: Introductionmentioning
confidence: 99%
“…3a). This structure is the characteristic of the surface morphology of p-Si that formed by the interconnected pillars of silicon crystal [17]. The size of the pillars that formed this porous structure is varied from 25 to 50 nm.…”
Section: Resultsmentioning
confidence: 98%