Effect of etching time on structure of p-type porous silicon

Kopáni, Martin; Mikula, Milan; Kosnáč, Daniel; Vojtek, Pavol; Gregus, Jan; Vavrinský, Erik; Jergel, M.; Pinčík, Emil

doi:10.1016/j.apsusc.2018.04.228

Cited by 19 publications

(6 citation statements)

References 24 publications

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“…Namely it is related to the SiOxHy compounds covering the structure's surface. The presence of the SiOxHy has been confirmed in the works [5,12] using FTIR spectrometry of the samples of this type in wavenumber range 790-1250 cm -1 (0.098 -0.155 eV).…”

Section: Resultsmentioning

confidence: 73%

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Photoluminescence Investigation of Inhomogeneous Porous P-type Si

Brunner¹,

Vojtek²,

Zábudlá³

et al. 2019

Adv. sci. technol. eng. syst. j.

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Photoluminescence (PL) of inhomogeneous porous silicon (PS) of p-type is investigated in this contribution. We measured the PL signal at equidistant positions separated by 0.05 mm in area localized between original crystalline Si (c-Si) wafer surface and electrochemically prepared PS layer. Two PL peaks localized at energies 1.8 and 1.9 eV were identified and their parameters were determined. The changes of PL maxima energy ("blue shift") in dependence on position were observed.

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Section: Resultsmentioning

confidence: 73%

“…The model, in which the maximum of PL localized at 640 nm is related to defective levels os SiHx and SiOy components, is greatly accepted. The presence of groups SiOxHy, observed using FTIR spectroscopy in IR region, was reported in the work [5]. Only small influence of PL on surface morphology was found.…”

Section: Introductionmentioning

confidence: 54%

Photoluminescence Investigation of Inhomogeneous Porous P-type Si

Brunner¹,

Vojtek²,

Zábudlá³

et al. 2019

Adv. sci. technol. eng. syst. j.

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“…The value of R was decreased, and RMS roughness was increased with the increase in etching time, indicating an increasing porosity of PSi. In turn, it caused an increase in the optical band gap energy and thickness of PSi, enabling the most extended channels for the light path length within the PSi layer [51].…”

Section: Structure and Morphology Of Znpsi And Znsiqdsmentioning

confidence: 99%

Performance Improvement of Graded Bandgap Solar Cell via Optimization of Energy Levels Alignment in Si Quantum Dot, TiO2 Nanoparticles, and Porous Si

Almomani

Ahmed²,

Rashid³

et al. 2022

Photonics

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Charge carriers’ generation from zinc includes silicon quantum dots (ZnSiQDs) layer sandwiched in-between porous silicon (PSi) and titania nanoparticles (TiO2NPs) layer-based solar cell is an efficient way to improve the cell’s performance. In this view, ZnSiQDs layer with various QDs sizes have been inserted, separating the PSi and TiO2NPs layers to achieve some graded bandgap quantum dot solar cells (GBQDSCs). In this process, ZnSiQDs of mean diameter 1.22 nm is first prepared via the top-down method. Next, ZnSiQDs have been re-grown using the bottom-up approach to get various mean diameters of 2.1, 2.7 and 7.4 nm. TiO2NPs of mean diameter in the range of 3.2 to 33.94 nm have been achieved via thermal annealing. The influence of different ZnSiQDs sizes on the designed GBGQDSCs performance has been determined. The proposed cell attains a short circuit current of 40 mA/cm2 and an efficiency of 4.9%. It has been shown that the cell performance enhances by optimizing the energy levels alignment in the PSi, ZnSiQDs, TiO2NPs layers.

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“…These reactions are affected by the type of conductivity, wafer res istivity, current density, type of dopant, and solution composition. [11].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application

Jwied¹,

Nayef²,

Mutlak³

2022

ETJ

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In the present study, the layers of porous Silicon (PS) have been produced from the p-type Silicon with a (100) orientation using the approach of electrochemical etching. The samples were anodized in a solution of HF concentration 18% and 99% C2H2OH. Samples characteristics of PS were studied by etching time constant (15 min). In addition, the alteration of the current density value into (5, 10,15,20, and 25) mA/ cm 2 was also studied. Samples were characterized by nanocrystalline porous Silicon via X-Ray Diffraction (XRD). The AFM (Atomic force microscope) analysis of PS shows the sponge-like structure. Also, a 39.76 nm average diameter was coordinated in the rod-like temperature variation, fabricated from prepared samples on the sensor's sensitivity, recovery time, and response time. The maximal level of the sensitivity has been approximately (20,11)% for porous Silicon of gas NO2 and NH3, respectively.

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Effect of etching time on structure of p-type porous silicon

Cited by 19 publications

References 24 publications

Photoluminescence Investigation of Inhomogeneous Porous P-type Si

Photoluminescence Investigation of Inhomogeneous Porous P-type Si

Performance Improvement of Graded Bandgap Solar Cell via Optimization of Energy Levels Alignment in Si Quantum Dot, TiO2 Nanoparticles, and Porous Si

Synthesis of Porous Silicon by Electrochemical Etching for Gas Sensor Application

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