Effect of ex situ Post-annealing Treatments on Sr2FeMoO6 Thin Films

Metsänoja, M.; Majumdar, Sayani; Huhtinen, H.; Paturi, P.

doi:10.1007/s10948-011-1355-6

Cited by 9 publications

(4 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All the values are quite close to each other, but a slight increase in RMS-roughness with increasing thickness is observed. The RMS-roughness values are also quite high compared to the previously obtained values (from 2.7 nm to 9.7 nm [5,24]) and considering the possible multilayer structured applications. The film thickness was determined with AFM over an edge etched with nitric acid.…”

Section: Structural and Magnetic Propertiessupporting

confidence: 47%

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr₂FeMoO₆thin ﬁlms

Saloaro

Majumdar

Huhtinen

et al. 2013

EPJ Web of Conferences

View full text Add to dashboard Cite

Abstract.Magnetoresistive Sr 2 FeMoO 6 thin films were grown by pulsed laser deposition with three different thicknesses 150 nm, 270 nm and 500 nm. Structural, magnetic and magneto-transport properties of the films were measured. Structural properties showed that impurity phases are formed when the film thickness exceed limiting thickness over 300 nm. Otherwise no major differences were observed in structural and magnetic properties between the films. The semiconductive upturn was observed in all ρ(T ) curves, but it was notably smaller for the two thickest films. At 350 K the magnetoresistive (MR) behaviour was very similar for all the films, but at 10 K the negative MR was clearly largest for the thickest film and also the shape of the curve in low fields deviated from others.

show abstract

Section: Structural and Magnetic Propertiessupporting

confidence: 47%

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr₂FeMoO₆thin ﬁlms

Saloaro

Majumdar

Huhtinen

et al. 2013

EPJ Web of Conferences

View full text Add to dashboard Cite

show abstract

“…However, the tunneling barriers necessary for LFMR could be additionally created, e.g., by a post-deposition heat treatment at 475-500 • C in an ultrapure Ar (99.9995 %) atmosphere for 5 h [56] or by annealing in a reducing 5%H 2 /N 2 atmosphere for 10 h at 950 • C [58]. In comparison, neither magnetic nor magnetotransport nor structural properties were improved by post-deposition annealing of SFMO thin films at temperatures between 500 and 1100 • C in a vacuum, Ar, 5%H 2 /Ar, or air atmospheres for 5 or 10 h [59]. Obviously, grain boundary modification should be performed under carefully selected conditions.…”

Section: Low-field Magnetoresistancementioning

confidence: 95%

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

et al. 2022

View full text Add to dashboard Cite

Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital converters, and magnetic sensors. In this work, we consider the main tasks to be solved when creating such devices based on strontium ferromolybdate: (i) selecting an appropriate tunnel barrier material, (ii) determining the role of the interface roughness and its quantification, (iii) determining the influence of the interface dead layer, (iv) establishing appropriate models of the tunnel magnetoresistance, and (v) promoting the low-field magnetoresistance in (111)-oriented thin films. We demonstrate that (i) barrier materials with a lower effective electronegativity than strontium ferromolybdate are beneficial, (ii) diminution of the magnetic offset field (the latter caused by magnetic coupling) requires a wavy surface rather than solely a surface with small roughness, (iii) the interface dead-layer thickness is of the order of 10 nm, (iv) the tunnel magnetoresistance deteriorates due to spin-independent tunneling and magnetically disordered interface layers, and (v) antiphase boundaries along the growth direction promote the negative low-field magnetoresistance by reducing charge carrier scattering in the absence of the field.

show abstract

“…[142] Depending on deposition conditions, LFMR might be missing in SFMO thin films deposited by PLD onto SrTiO 3 (001) substrates. [32,109] However, the tunneling barriers necessary for LFMR could be additionally created, for instance, by a postdeposition film annealing at 475-500 C in an ultrapure Ar (99.9995%) atmosphere for 5 h [32] or by annealing in a reducing 5% H 2 /N 2 atmosphere for 10 h. [143] Contrarily, neither magnetic nor magnetotransport or structural properties were improved by postdeposition annealing of SFMO thin films between 500 and 1100 C in vacuum, Ar, 5% H 2 /Ar, and air atmospheres for 5 or 10 h. [144] Obviously, grain boundary modification should be performed under carefully selected conditions. LFMR is favored in thin films subjected to large biaxial compressive strain at the film-substrate interface.…”

Section: Low-field Magnetoresistancementioning

confidence: 99%

Challenges in Sr₂FeMoO_6−δ Thin Film Deposition

Suchaneck

Каланда

Artsiukh

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

This work reviews some fundamental issues that are relevant for the fabrication of stable‐phase strontium ferromolybdate thin films. The main challenges for strontium ferromolybdate thin film deposition arise from the sensitivity of the material's magnetic properties to point defect formation: i) Antisite defect formation and oxygen nonstoichiometry should be avoided by precise composition control during film manufacturing; ii) a highly ordered state of the correct phase and B‐site cation valence will be obtained only in a very narrow window of growth conditions; iii) to avoid additional antisite disorder with decreasing synthesis temperature, the effective temperature at the film surface should be increased by an energy flux to the growing film surface. Since thin film deposition is nonequilibrium in nature, the review starts with the consideration of equilibrium phase stability. Cation and oxygen stoichiometries are analyzed with regard to their effect on key magnetic properties. Film strain formed due to thermal and lattice mismatch is of great concern since it influences the choice of the substrate. Finally, thin film deposition techniques are valued for their benefits in strontium ferromolybdate thin film technology.

show abstract

Effect of ex situ Post-annealing Treatments on Sr2FeMoO6 Thin Films

Cited by 9 publications

References 25 publications

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr₂FeMoO₆thin ﬁlms

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr₂FeMoO₆thin ﬁlms

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

Challenges in Sr₂FeMoO_6−δ Thin Film Deposition

Contact Info

Product

Resources

About

Effect of ex situ Post-annealing Treatments on Sr2FeMoO6 Thin Films

Cited by 9 publications

References 25 publications

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr2FeMoO6thin ﬁlms

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr2FeMoO6thin ﬁlms

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

Challenges in Sr2FeMoO6−δ Thin Film Deposition

Contact Info

Product

Resources

About

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr₂FeMoO₆thin ﬁlms

The effect of ﬁlm thickness on the magnetic and magneto-transport properties of Sr₂FeMoO₆thin ﬁlms

Challenges in Sr₂FeMoO_6−δ Thin Film Deposition