Effect of External Stress Applied during Annealing on Hydrogen- and Oxygen-Implanted Silicon

Misiuk, A.; Surma, Hańcza B.; Antonova, I. V.; Popov, V.; Bąk‐Misiuk, J.; López, M.; Romano‐Rodríguez, A.; Barcz, A.; Jun, J.

doi:10.4028/www.scientific.net/ssp.69-70.345

Cited by 20 publications

(8 citation statements)

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“…The hydrogen presence in small concentration decreases the formation energy of both a vacancy and a divacancy by the value of about 2 eV. But at the high hydrogen concentrations vacancies and divacancies have to be formed and to fill with hydrogen spontaneously in accordance with our calculation [21] and experimental data [22].…”

Section: Hydrogen Influence On the Vacancy Complexes Formation In Silsupporting

confidence: 78%

First-Principles Calculation of He-H Interaction in c-Si

et al. 2006

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We used the density functional theory and ab initio pseudopotentials to investigate He-H interaction in crystalline silicon. It was shown that both hydrogen and helium stimulate the formation of vacancy complexes. The presence of hydrogen decreases the vacancy and divacancy formation energies by about 2 eV. The presence of one or two helium atoms reduces the divacancy formation energy by 0.3 and 0.4 eV, respectively. The influence of helium presence on hydrogen diffusion from silicon vacancies under high pressure depends on a helium concentration. Thus, according to our calculation, low concentrations of He increase the hydrogen out-diffusion.

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Section: Hydrogen Influence On the Vacancy Complexes Formation In Silsupporting

confidence: 78%

First-Principles Calculation of He-H Interaction in c-Si

et al. 2006

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“…Contrary to the case of annealing under atmospheric pressure (10 5 Pa), hydrogen atoms remain to be detectable by SIMS in Cz-Si:H even after HT-HP treatment at 920 K for 2 h [6]. This means that enhanced HP at annealing of hydrogen-enriched silicon results in the marked hydrogen content in the HT-HP treated samples while hydrogen out-diffuses almost fully from the hydrogenated samples subjected to similar treatments but under low pressure [6].…”

Section: Resultsmentioning

confidence: 76%

“…In view of the seemingly similar effects of hydrogen and of HP on the transformation of oxygen interstitials in Cz-Si at annealing, investigations of the effect of HT-HP treatment on hydrogenated Cz-Si are of considerable interest. It can be seen from the hitherto published, rather preliminary data [6], that the HT-HP treatment of hydrogen plasma etched Cz-Si results in a markedly decreased hydrogen out-diffusion while the creation of TDs is even more promoted.…”

Section: Introductionmentioning

confidence: 99%

The microstructure and electrical properties of hydrogenated Czochralski silicon treated at high temperature–pressure

Misiuk

Ratajczak

Sgorbini

et al. 2003

J. Phys.: Condens. Matter

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Annealing at up to 1400 K of hydrogen plasma etched Czochralski silicon (Cz-Si:H) under enhanced hydrostatic pressure (HP) up to 1.1 GPa (HT–HP treatment) results in specific effects related both to the presence of hydrogen and to enhanced HP. The latter strongly affects the sample microstructure, precipitation of oxygen interstitials and creation of thermal donors (TDs). The HT–HP induced effects in Cz-Si:H are related to the HP stimulated creation of nucleation sites for the creation of TDs and oxygen precipitation as well as to decreased hydrogen out-diffusion under HP.

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“…Som e results for the Si:O sampl es prepa red by l ow-dose i mpl anta tio n ( ç 1 È 1 0 cm ) [3,5] were al so presented for reference. to 1570 K under arg on pressure up to 1.2 G Pa , typi cal ly for 5 h. The equi pm ent used f or tha t trea tm ent wa s describ ed elsewhere [2].…”

Section: Introductionmentioning

confidence: 99%