Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

Chandramohan, S.; Kanjilal, A.; Sarangi, S.N.; Majumder, Subrata; Ramakrishnan, S.; Som, T.

doi:10.1007/s00339-010-5598-z

Cited by 25 publications

(9 citation statements)

References 22 publications

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“…This shift can be attributed to structural modifications occurring within the CdS film due to the incorporation of rare-earth metal elements. The decrease in bandgap is likely associated with energy level localization and band-tailing effects resulting from the wave function overlap between electrons and impurity atoms. , …”

Section: Resultsmentioning

confidence: 99%

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Morphological, Photoluminescence, and Electrical Measurements of Rare-Earth Metal-Doped Cadmium Sulfide Thin Films

Azhar,

Nowsherwan,

Iqbal

et al. 2023

ACS Omega

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This work is aimed at investigating the viability of utilizing cadmium sulfide (CdS) as a buffer layer in CdTe solar cells by analyzing and assessing its optical, photoluminescence, morphological, and electrical properties. These films were fabricated using a thermal coating technique. Optical microscopy was used to observe the changes in morphology resulting from the doping of rare-earth metals such as samarium (Sm) and lanthanum (La) to CdS, while the granular-like structure of the sample was confirmed by scanning electron microscopy. The objective of incorporating Sm and La ions into CdS was to enhance photoconductivity and optimize the optical bandgap, aiming to create a viable charge transport material for photovoltaic devices with enhanced efficiency. Through that process, a noticeable decrease in transmission, from approximately 80 to 68% in the visible region, was observed. Additionally, the bandgap value was reduced from 2.43 to 2.27 eV. Furthermore, during the analysis of the photoluminescence spectra, it was observed that emission peaks occurred in the visible region. These emissions were attributed to electronic transitions that took place via band-to-band and band-to-impurity interactions. The electrical measurements showed an enhancement in conductivity due to the decrease in the bandgap. This notable consequence of the doped materials suggests their utilization in photovoltaic systems.

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Section: Resultsmentioning

confidence: 99%

“…The decrease in bandgap is likely associated with energy level localization and band-tailing effects resulting from the wave function overlap between electrons and impurity atoms. 55,56 3.7. Photoluminescence Spectroscopy.…”

Section: Uv−vis Spectroscopymentioning

confidence: 99%

Morphological, Photoluminescence, and Electrical Measurements of Rare-Earth Metal-Doped Cadmium Sulfide Thin Films

Azhar,

Nowsherwan,

Iqbal

et al. 2023

ACS Omega

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“…By plotting (αhυ) 2 against hυ, the band gap value can be extrapolated from the straight line at α = 0. From the Figures (6)(7)(8) it can show that the energy gap decreased with increasing annealing temperature from 2.52 eV for film prepared at room temperature to 2.47 eV for thin film annealed at 500 °C.…”

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confidence: 95%

“…The deposition of CdS films has been explored by different techniques, namely thermal evaporation, chemical bath deposition, chemical surface deposition, pulsed laser deposition, ion implantation, gradient re-crystallization and growth, radio-frequency magnetron sputtering and chemical spray pyrolysis [7][8][9][10][11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Annealing Temperature Effects on the Optical Properties of CdO Thin Films Deposited by CSP Technique

Chiad

2014

ILCPA

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By chemical spray pyrolysis method. The CdO thin film prepared at constant film thickness (350 nm). The prepared films are annealed at a temperature of 450 and 500 °C. The optical properties are calculated from the measurement of UV-Visible spectrophotometer spectrum in the range of (300-900) nm at room temperature. The transmittance, absorption coefficient, extinction coefficient, refractive index, and skin depth are calculated as annealing temperature. The energy gap decreased from 2.52 eV to 2.47 eV when the annealing temperature increased from room temperature to 500 °C.

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“…Holes in the valence band due to doping and specific treatments affect the conductivity of semiconductors. The presence of chromium as a doping agent in CdS thin films is expected to have positive effects on their properties. − Investigations into CdS films doped with chromium (Cr) have been relatively scarce, as indicated in refs –.…”

Section: Introductionmentioning

confidence: 99%

Optical, Electrical, and Morphologic Characterization of Chromium-Impurified CdS Thin Films Elaborated by the Chemical Bath Deposition

Contreras-Rodriguez,

Mendivil-Reynoso,

Landin

et al. 2023

ACS Omega

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In this research work, a material system formed of cadmium sulfide combined with chromium atoms was developed to evaluate the influence of chromium concentration on the optical, electrical, structural, and morphological properties of a precursor layer of CdS. It is possible to observe that the transmission spectra increased for all chromium concentrations analyzed. From X-ray diffractograms, we conclude more accurately that CdS presents a mixture of phases, including orthorhombic, hexagonal, and cubic. Furthermore, the impact of adding chromium results in variations in the intensity of two major peaks in the diffractograms and an anomalous shift in the CdS pattern. The calculated resistivities show an invariable behavior of 4.5 × 10 6 Ω cm. In addition, the bandgap values remain practically constant, with values of approximately 2.43−2.44 eV. The addition of chromium at different concentrations leads to surface morphology changes, as observed in SEM images.

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Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films

Cited by 25 publications

References 22 publications

Morphological, Photoluminescence, and Electrical Measurements of Rare-Earth Metal-Doped Cadmium Sulfide Thin Films

Morphological, Photoluminescence, and Electrical Measurements of Rare-Earth Metal-Doped Cadmium Sulfide Thin Films

Annealing Temperature Effects on the Optical Properties of CdO Thin Films Deposited by CSP Technique

Optical, Electrical, and Morphologic Characterization of Chromium-Impurified CdS Thin Films Elaborated by the Chemical Bath Deposition

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