Effect of Ferroelectric Polarization on Carrier Transport in Controlled Polarization-Type Ferroelectric Gate Field-Effect Transistors with Poly(vinylidene fluoride–tetrafluoroethylene)/ZnO Heterostructure

Abstract

The carrier transport properties of ferroelectric gate field-effect transistors composed of oxide polar semiconductors, ZnO, and organic ferroelectrics, poly(vinylidene fluoride–tetrafluoroethylene) [P(VDF–TeFE)], were investigated. The P(VDF–TeFE)/ZnO heterostructure with a 100-nm-thick channel shows a large ON/OFF ratio of 105 in the drain current while that with a channel thickness of 500 nm shows small changes. To clarify the effect of ferroelectric polarization on the carrier transport properties, Hall effect measurement was carried out after poling treatment. Although the Hall mobility for the channel thickness of 500 nm shows no dependence on the poling voltage, that for the channel thickness of 100 nm increases with increasing poling voltage. The temperature dependence of the carrier transport properties indicates that the Hall mobility for the channel thickness of 100 nm increases when the carriers are accumulated at the interface between P(VDF–TeFE) and ZnO, especially below 200 K. The results suggest that the reduction in ionized impurity scattering, which originates from the carrier accumulation due to ferroelectric polarization, increases the mobility.

Hierarchical dielectric orders in layered ferroelectrics Bi2SiO5

“…Designing and controlling the intense local electric field and/ or polarization in solids is vital for emerging electronics, such as high-performance field-effect transistors, ferroelectric random access memory and multiferroic devices in the nanoscale (de Araujo et al, 1995;Auciello et al, 1998;Haertling, 1999;Scott, 2000;Dawber et al, 2005;Schilling et al, 2007;Chung et al, 2011;Yamada et al, 2012;Keeney et al, 2012aKeeney et al, ,b, 2013Maity et al, 2012;Zhang et al, 2012). Dielectric properties have been mainly discussed in terms of macroscopic properties based on measurements of dielectric permittivity (") and electric polarization (P) under electric fields (E) for bulk samples so far.…”

A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide

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