Effect of film thickness and the presence of surface fluorine on the structure of a thin barrier film deposited from tetrakis-(dimethylamino)-titanium onto a Si(100)-2×1 substrate

Higher UV-shielding ability and lower photocatalytic activity of TiO2@SiO2/APTES and its excellent performance in enhancing the photostability of poly(p-phenylene sulfide)

“…The peak at 530.0 eV corresponds to the O atoms in TiO 2 . 28,29 Another peak at 531.7 eV is consistent with the peak position for surface termination oxygen 30,31 or absorbed water. graing of APTES onto the surface of the TiO 2 @SiO 2 .…”

Chemistry of Organometallic Compounds on Silicon: The First Step in Film Growth

“…However, a new problem appeared: ligands are usually complex and leave other sources of contamination, such as carbon, nitrogen, oxygen, or fluorine, as was shown in several examples in our group 5. 6 Lower levels of contamination can be obtained if a co‐dosing agent is used. One of the more recently developed methods, atomic layer deposition (ALD), consists of a series of self‐limiting reactions with two compounds.…”

Chemical manipulation of multifunctional hydrocarbons on silicon surfaces

“…3.40, it was concluded that the remaining species is the hfac ligand bonded to a copper atom, which is in turn bound to silicon surface, structure A [356]. These findings were later expanded to explain the structural characteristics of thin diffusion barrier film, TiCN [360][361][362], and to understand the chemical reactivity of its surface [363,364] with respect to the copper deposition process. Most of the other investigations of the effects of a metal presence on the chemistry of organometallic molecules are related to the chemistry of deposition of metals and metal compounds onto silicon.…”