Effect of Film Thickness on Photoelectrochemical Performance of SnO<sub>2</sub> Prepared via AACVD

Noh, Mohamad Firdaus Mohamad; Soh, Mohd Fairuz; Riza, Muhammad Arif; Safaei, Javad; Nasir, Siti Nur Farhana Mohd; Sapian, Norfaizzatul W. Mohamad; Teh, Chin Hoong; Ibrahim, Mohd Adib; Teridi, Mohd Asri Mat

doi:10.1002/pssb.201700570

Cited by 29 publications

(11 citation statements)

References 41 publications

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“…This stems from the larger distance charge has to travel through the NiO film before being collected on the external circuit. Such a condition intensifies the charge recombination rate within the device . The J sc obtained from the current–voltage curves are confirmed and supported by the IPCE measurement, and the calculated short‐circuit current densities are 9.47, 15.69, 18.08, and 12.81 mA cm −2 for devices using NiO deposited for 30, 45, 60, and 75 min.…”

Section: Resultssupporting

confidence: 67%

Outstanding Photocurrent Density and Incident Photon‐to‐Current Conversion Efficiency of Liquid‐State NiO Perovskite‐Sensitized Solar Cells

Alessa

Noh

Mumthas

et al. 2020

Physica Status Solidi (a)

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The efficiency and photocurrent density reported for p-type-sensitized solar cells up to now are still lagging behind that of the n-type counterparts, limiting the successful development of p-n tandem cells. To circumvent this issue, NiO thin film is fabricated by the aerosol-assisted chemical vapor deposition (AACVD) technique and used in p-type solar cells. A systematic study is conducted to comprehend the correlation between NiO thickness and the power conversion efficiency (PCE) of liquid-state NiO-based sensitized solar cells. By carefully designing the cell components, this type of device demonstrates the highest photocurrent density ( J sc ) exceeding 18 mA cm À2 when using iodine/triiodide as the redox shuttle matching the one produced by the TiO 2 counterpart. This is accomplished by 1) using the AACVD technique for the one-step deposition of compact and mesoporous NiO electrodes, 2) optimizing the thickness of the NiO layer through controlling the deposition time, and 3) adopting methylammonium lead iodide (CH 3 NH 3 PbI 3 ) as a light harvester prepared via a sequential deposition method.

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Section: Resultssupporting

confidence: 67%

Outstanding Photocurrent Density and Incident Photon‐to‐Current Conversion Efficiency of Liquid‐State NiO Perovskite‐Sensitized Solar Cells

Alessa

Noh

Mumthas

et al. 2020

Physica Status Solidi (a)

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“…01-074-4894) for BiVO 4 . The peak intensities of (121), (040), (051), (042), and (161) support that g-C 3 N 4 @BiVO 4 has better crystallized structures. , It can be concluded that γ radiation has a negligible effect on the crystalline structure of g-C 3 N 4 @BiVO 4 , which is due to the close packing of atoms.…”

Section: Resultsmentioning

confidence: 74%

“…Several processing parameters are involved in the spinning process such as solution viscosity, solution concentration, spin time, and spin speed . This technique is necessary that forms a uniform layer to prevent a pinhole and large surface area from absorbing more light. ,, The existence of the elements of C and N in the samples was supported by EDX analysis as shown in Figure c. It can be observed no other impurity peak was detected, except the peak of Sn (probably attributed to the FTO).…”

Section: Resultsmentioning

confidence: 89%

“…This decrease in the optical band gap is basically due to the increase in the energy width of band tails of localized state; similar observations have been reported by other researchers as well. ,, Meanwhile, Figure c shows photoanode absorption and the direct band gap transition of BiVO 4 thin films. The absorption was determined from the plots of (α hv ) versus ( hv ), and the estimated band gap energy was 2.48 eV. ,, …”

Section: Resultsmentioning

confidence: 99%

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Efficient Photoelectrochemical Performance of γ Irradiated g-C₃N₄ and Its g-C₃N₄@BiVO₄ Heterojunction for Solar Water Splitting

Mohamed¹,

Ullah

Safaei³

et al. 2019

J. Phys. Chem. C

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102

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Comprehensive experimental and density functional theory simulations have been performed for the enhanced photoelectrochemical performance of gamma irradiated g-C 3 N 4 and its heterojunction with BiVO 4. The structure and morphology of g-C 3 N @BiVO as a heterojunction were analyzed and verified from the correlation of experimental and theoretical data. It is found that gamma radiations have changed the bonding structure of

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“…The significantly higher band gap of our as‐synthesized pcaSS, compared with other metal oxides or nitrides, enabled the achievement of a high transmittance of above 80% down to wavelength of 250 nm. In fact, the substitution of metal (M) site in the perovskite structure of (M)SnO 3 with another element with larger atomic radius such as Barium culminated in the formation of the lower band gap BaSnO 3 (≈3.4 eV), that is unsuitable for ultraviolet TCE.…”

Section: Performance Comparison Of Different Tcesmentioning

confidence: 99%

Low Temperature Fabrication of Transparent Conductive Electrode With High Ultraviolet Transmittance Down to Wavelength of 250 nm

Safaei

Rosli

Noh

et al. 2018

Physica Rapid Research Ltrs

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Indium tin oxide (ITO) is a broadly deployed transparent conductive electrode (TCE) with various applications in solar energy harvesting and optoelectronics. However, the low transmittance of ITO in the ultraviolet range has motivated researchers to opt for alternative materials as TCE. In this paper, the fabrication of a hybrid TCE made up of silver nanowire (AgNW) and peroxo-constructed amorphous strontium stannate (pcaSS) is reported, employing facile spin coating solution-processed method at 150 C. The fabricated TCE demonstrated low sheet resistance of 32.8 Ω sq À1 and high transmittance of 88.2% at 550 nm. Furthermore, benefitting from the ultrahigh band gap of as-synthesized pcaSS (4.5 eV), this TCE maintained its high transmittance (above 80%) inside ultraviolet range down to wavelength of 250 nm. This research contributes to the fabrication of more efficient solar energy and ultraviolet optoelectronic devices.Indium tin oxide (ITO) has been commercialized as a transparent conductive electrode (TCE) with various applications in solar cells, LEDs, and touch screens, to name a few. Nevertheless, the scarcity of indium has necessitated the replacement of ITO with alternative thin films. [1,2] Furthermore, the low transmittance of ITO within ultraviolet region restricts its application in ultraviolet optoelectronics due to inter-band absorption and light scattering by free electrons. [3,4] Numerous alternatives for ITO have proved propitious, including carbonaceous materials, [5][6][7] aluminum doped zinc oxide (AZO), [8,9] fluorine doped tin oxide (FTO), [10,11] and metal nanowire network. [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Compared with the aforementioned conductive materials, the higher transmittance of metal nanowires into deep-ultraviolet (%200 nm) has motivated further research into the fabrication of ultraviolettransparent TCE for various optoelectronic applications. [18] In comparison with their gold and copper counterparts, silver nanowire (AgNW) has obtained the attention of numerous research groups due to its lower cost and higher physiochemical stability. [17][18][19][20][21][22][23][24][25][26][27] Although pristine AgNW demonstrated a remarkable transmittance from near-infrared down to deep-ultraviolet, [18] its high junction resistance, resulting from poor interconnections of nanowire networks, has been addressed by several researchers. [18][19][20][21][22][23][24][25][26][27] This issue was resolved by the deposition of transparent conductive materials to fill the pores and empty spaces within nanowire networks to enhance their conductivity. In regards to the physical instability of AgNW at 200 C, [17,20] numerous low temperaturebased techniques were contrived such as electron-beam evaporation, [18] atomic layer deposition, [19] sputtering, [20][21][22] and solution-processed deposition for coating metal oxides and/or conductive polymers on AgNW. [23][24][25][26][27] Diverse metal oxides were deposited on AgNW, including ZnMgO, [19] AZO, [21] indium doped zinc oxi...

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Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

Cited by 29 publications

References 41 publications

Outstanding Photocurrent Density and Incident Photon‐to‐Current Conversion Efficiency of Liquid‐State NiO Perovskite‐Sensitized Solar Cells

Outstanding Photocurrent Density and Incident Photon‐to‐Current Conversion Efficiency of Liquid‐State NiO Perovskite‐Sensitized Solar Cells

Efficient Photoelectrochemical Performance of γ Irradiated g-C₃N₄ and Its g-C₃N₄@BiVO₄ Heterojunction for Solar Water Splitting

Low Temperature Fabrication of Transparent Conductive Electrode With High Ultraviolet Transmittance Down to Wavelength of 250 nm

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Effect of Film Thickness on Photoelectrochemical Performance of SnO2 Prepared via AACVD

Cited by 29 publications

References 41 publications

Outstanding Photocurrent Density and Incident Photon‐to‐Current Conversion Efficiency of Liquid‐State NiO Perovskite‐Sensitized Solar Cells

Outstanding Photocurrent Density and Incident Photon‐to‐Current Conversion Efficiency of Liquid‐State NiO Perovskite‐Sensitized Solar Cells

Efficient Photoelectrochemical Performance of γ Irradiated g-C3N4 and Its g-C3N4@BiVO4 Heterojunction for Solar Water Splitting

Low Temperature Fabrication of Transparent Conductive Electrode With High Ultraviolet Transmittance Down to Wavelength of 250 nm

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Effect of Film Thickness on Photoelectrochemical Performance of SnO₂ Prepared via AACVD

Efficient Photoelectrochemical Performance of γ Irradiated g-C₃N₄ and Its g-C₃N₄@BiVO₄ Heterojunction for Solar Water Splitting